PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
Below are the two specifications of our silicon items that are great for FTIR Spectroscopy:
1) Si 100mm low B or P doped <100>, 10,000 ohm-cm, 525um, DSP Prime
2) 150mm dia. <100> low B or P doped FZ Si DSP, >100 [...]
2019-02-26meta-autor
PAM XIAMEN offers 2″ FZ Si wafer with SSP
2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-15meta-autor
PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.
No1. C [...]
2020-04-03meta-autor
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES.
Nd:GGG (neodymium doped gadolinium gallium garnet)
Chemical formula: Nd:Gd3Ga5O12
Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
2019-03-12meta-autor
Três luminárias LED decorativas da Acuity Brands foram selecionadas para receber o prêmio Lighting for Tomorrow (LFT) 2016. A competição anual foi criada em 2002 para reconhecer as melhores luminárias decorativas e energeticamente eficientes do mercado e é organizada pela American Lighting Association, pelo Consortium for Energy Efficiency [...]
2016-09-14meta-autor
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
2019-12-02meta-autor