PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
A-plane (11-20)
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP
Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP
Al2O3 – [...]
2019-04-16meta-author
Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]
2021-04-27meta-author
PAM XIAMEN offers LD Bare Bar for 976nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 976nm
Filling Factor: 10%
Output Power: 35W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
4″
500
P/E
FZ >10,000
Prime, TTV<5μm
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime, Extra 8 scratched wafers in cassette free of charge
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ >2,000
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
450
P/P
FZ 1,000-2,000
SEMI Prime
p-type Si:B
[100]
4″
420
C/C
FZ 850-900
SEMI Prime
p-type Si:B
[100]
4″
200 ±10
P/P
FZ 100-120
SEMI Prime
p-type Si:B
[100]
4″
250
P/P
FZ 1-3 {0.97-1.01}
SEMI [...]
2019-03-05meta-author