PAM XIAMEN offers 125mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
125
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
125
N
Phos
CZ
-100
1-20
550-600
P/E/OX
PRIME
125
N
Phos
CZ
-100
1-20
575-625
P/E/WTOx
125
N
Phos
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
N
Phos
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
125
P
Boron
CZ
-100
1-50
550-650
P/E
PRIME
125
P
Boron
CZ
-100
1-20
575-625
P/E/WTOx
125
P
Boron
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
P
Boron
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
FZ
-100
1000-5000
875-925
P/E
PRIME
125
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
125
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
PAM XIAMEN offers Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness.
PAM [...]
2019-05-08meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer
tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
General Properties for Tantalum
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 [...]
2019-05-20meta-author