Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused by charged water drops and [...]
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is the coupling of diffusion, chemical [...]
Study of Highly Pixelated CdZnTe Detector for PET Applications We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution to sub-500 micrometer [...]
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of HF and HCl are employed [...]
Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection [...]
Measurements on the spectroscopic performance of CdZnTe coplanar grid detectors A performance study was performed for CdZnTe coplanar grid (CPG) detectors when used as γ-ray spectrometers. The detectors have the crystal volumes of 1, 1.6875 and 2.25 cm3, respectively. Time stability of each CdZnTe CPG detector was investigated in a long-term [...]
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated as one part of the [...]
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing the cumulative energy demand (CED) [...]
PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs are between the properties of [...]
Development of a gate metal etch process for gallium arsenide wafers The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss our experimental program designed to [...]
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