Epi bolacha por Laser Diode

Epi Wafer para diodo laser

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Descrição

Descrição do produto

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

substrato material Capacidade de materiais Comprimento de onda Aplicação
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
Epi-wafer baseado em GaAs 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / GalnP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785nm  
Epi-wafer baseado em GaAs 800-1064nm LD infravermelho
GaAs / GalnP / AlGaInP / GaInP 808nm LD infravermelho
Epi-wafer baseado em GaAs 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
Epi-wafer baseado em GaAs <870nm Fotodetector
Epi-wafer baseado em GaAs 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
Epi-wafer baseado em GaAs 980nm LD infravermelho
Epi-wafer baseado em InP 1250-1600nm Detector fotográfico de avalanche
Epi-wafer baseado em GaAs 1250-1600nm/>2.0um
(InGaAs absorptive layer)
Fotodetector
Epi-wafer baseado em GaAs 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
Fotodetector
Epi-wafer baseado em InP 1270-1630nm Laser DFB
Substrato GaAsP / GaAs / GaAs 1300nm  
Epi-wafer baseado em InP 1310nm Laser FP
Substrato GaAsP / GaAs / GaAs 1550nm Laser FP
  1654 nm  
Epi-wafer baseado em InP 1900nm Laser FP
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

Microplaqueta da bolacha do laser de VCSEL

VCSEL Laser Epi Wafer

Diodo laser epi wafer 703nm

808nm diodo laser epi wafer-1

780nm diodo laser epi wafer

Díodo laser epi wafer 650nm

785nm diodo laser epi wafer

808nm laser diode epi wafers-2

Diodo laser epi wafer de 850 nm

905nm diodo laser epi wafer

940nm laser diode epi wafer

950nm diodo laser epi wafer

1550nm diodo laser epi wafer

1654nm diodo laser epi wafer

Díodo laser de 2004 nm epi wafer

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

Camadas de pontos quânticos InAs no substrato InP

 

Chips de emissor único

Chip LD de emissor único 755nm @ 8W

-Emissor único LD Chip 808nm @ 8W

Chip LD de emissor único 808nm @ 10W

Chip LD de emissor único 830nm @ 2W

Chip LD de emissor único 880nm @ 8W

Chip LD de emissor único 900 + nm @ 10W

Chip LD de emissor único 900 + nm @ 15W

Chip LD de emissor único 905nm @ 25W

Chip LD de emissor único 1470nm @ 3W

A PAM XIAMEN oferece chip único de laser de alta potência 1470/1550 nm da seguinte forma:

LD Bare Bar

LD Barra Nua para 780nm @ cavidade 2,5mm

LD Barra Nua para 808nm @ cavidade 2mm

LD Barra Nua para 808nm @ cavidade 1,5mm

LD Barra Nua para 880nm @ cavidade 2mm

LD sem folhagem de bar para 940 nm @ 2 milímetros cavidade

LD nua Bar para 940nm @ cavidade 3 milímetros

LD nua Bar para 940nm @ cavidade 4 milímetros

LD sem folhagem de bar para 940 nm @ 2 milímetros cavidade

LD nua Bar para 976nm @ cavidade 4 milímetros

LD sem folhagem da barra por 1470nm @ cavidade 2 milímetros

LD Barra Nua para 1550nm @ cavidade 2mm