Epi Wafer para diodo laser
O wafer de epitaxia LD baseado em GaAs, que pode gerar emissão estimulada, é amplamente utilizado para fabricar diodo laser, uma vez que as propriedades superiores do wafer epitaxial GaAs tornam o dispositivo um baixo consumo de energia, alta eficiência, longa vida útil e etc. Além do arseneto de gálio LD epi wafer , os materiais semicondutores comumente usados são sulfeto de cádmio (CdS), fosfeto de índio (InP) e sulfeto de zinco (ZnS).
- Descrição
Descrição do produto
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| substrato material | Capacidade de materiais | Comprimento de onda | Aplicação |
| GaAs | GaAs / GalnP / AlGaInP / GaInP | 635nm | |
| Epi-wafer baseado em GaAs | 650nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / GalnP / AlGaInP / GaInP | 660nm | ||
| GaAs / AlGaAs / GalnP / AlGaAs / GaAs | 703nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 780nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 785nm | ||
| Epi-wafer baseado em GaAs | 800-1064nm | LD infravermelho | |
| GaAs / GalnP / AlGaInP / GaInP | 808nm | LD infravermelho | |
| Epi-wafer baseado em GaAs | 850nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| Epi-wafer baseado em GaAs | <870nm | Fotodetector | |
| Epi-wafer baseado em GaAs | 850-1100nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / AlGaAs / GaInAs / AlGaAs / GaAs | 905nm | ||
| GaAs / AlGaAs / InGaAs / AlGaAs / GaAs | 950nm | ||
| Epi-wafer baseado em GaAs | 980nm | LD infravermelho | |
| Epi-wafer baseado em InP | 1250-1600nm | Detector fotográfico de avalanche | |
| Epi-wafer baseado em GaAs | 1250-1600nm/>2.0um (InGaAs absorptive layer) |
Fotodetector | |
| Epi-wafer baseado em GaAs | 1250-1600nm/<1.4μm (InGaAsP absorptive layer) |
Fotodetector | |
| Epi-wafer baseado em InP | 1270-1630nm | Laser DFB | |
| Substrato GaAsP / GaAs / GaAs | 1300nm | ||
| Epi-wafer baseado em InP | 1310nm | Laser FP | |
| Substrato GaAsP / GaAs / GaAs | 1550nm | Laser FP | |
| 1654 nm | |||
| Epi-wafer baseado em InP | 1900nm | Laser FP | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Please see below detail specification of LD epitaxy wafer:
Microplaqueta da bolacha do laser de VCSEL
808nm laser diode epi wafers-2
Diodo laser epi wafer de 850 nm
Díodo laser de 2004 nm epi wafer
GaAs Epitaxy with Thick Growth
GaAs based Epi Structure MOCVD Grown for Light Emitter
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
Bolacha Laser FP (Fabry-Perot)
Chips de emissor único
Chip LD de emissor único 755nm @ 8W
-Emissor único LD Chip 808nm @ 8W
Chip LD de emissor único 808nm @ 10W
Chip LD de emissor único 830nm @ 2W
Chip LD de emissor único 880nm @ 8W
Chip LD de emissor único 900 + nm @ 10W
Chip LD de emissor único 900 + nm @ 15W
Chip LD de emissor único 905nm @ 25W
Chip LD de emissor único 1470nm @ 3W
A PAM XIAMEN oferece chip único de laser de alta potência 1470/1550 nm da seguinte forma:
LD Bare Bar
LD Barra Nua para 780nm @ cavidade 2,5mm
LD Barra Nua para 808nm @ cavidade 2mm
LD Barra Nua para 808nm @ cavidade 1,5mm
LD Barra Nua para 880nm @ cavidade 2mm
LD sem folhagem de bar para 940 nm @ 2 milímetros cavidade
LD nua Bar para 940nm @ cavidade 3 milímetros
LD nua Bar para 940nm @ cavidade 4 milímetros
LD sem folhagem de bar para 940 nm @ 2 milímetros cavidade
LD nua Bar para 976nm @ cavidade 4 milímetros