GaAs Epiwafer

Descrição do produto

GaAs Epi wafer 

As a leading GaAs epi wafer foundry, PAM-XIAMEN are manufacturing various types of epiwafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, which make a low gallium arsenide epi wafer defect. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

We have numbers of the United States Veeco’s GEN2000, GEN200 large-scale production of epitaxial equipment production line, full set of XRD; PL-Mapping; Surfacescan, and other world-class analysis and testing equipment. The company has more than 12,000 square meters of supporting plant, including world class super-clean semiconductor and a related research and development of the younger generation of clean laboratory facilities.

Specification for all new and featured products of MBE III-V compound semiconductor epitaxial wafer:

Gallium arsenide is currently one of the most important compound semiconductor materials with the highest mature epi wafer technology. GaAs material has the characteristics of large forbidden band width, high electron mobility, direct band gap, high luminous efficiency. Due to all all these epi wafer advantages, GaAs epitaxy is currently the most important material used in the field of optoelectronics. Meanwhile, it is also an important microelectronic material. According to the difference in electrical conductivity, GaAs epi wafer materials can be divided into semi-insulating (SI) GaAs and semiconductor (SC) GaAs.

In the field of epitaxial wafers, the epi wafer market share of RF and laser applications is very large.

Para mais especificação de detalhe, consulte o seguinte:

camada LT-epi GaAs sobre substrato de GaAs

LT GaAs Thin Film for Photodetectors and Photomixers

Low Temperature Grown InGaAs 

GaAs Schottky Diodo Epitaxial Wafers

InGaAs / InP bolacha epi para PIN

InGaAsP / InGaAs sobre substratos de InP

InGaAs APD Wafers with High Performance

GaAs / AlAs wafer

InGaAsN epitaxialmente em GaAs ou wafers InP

Estrutura para fotodetectores InGaAs

InP / InGaAs / InP bolacha epi

InGaAs Estrutura bolacha

AlGaP / GaAs Epi bolacha por célula solar

células solares tripla junção

Solar Cell Structure Epitaxially Grown on InP Wafer

GaAs Epitaxy

GaInP / InP bolacha epi

AlInP / GaAs epi bolacha

Growth of GaAsSb / InGaAs Type-II Superlattice

estrutura de camadas de laser 703nm

wafers de laser 808nm

wafers de laser 780nm

GaAs PIN epi bolacha

AlGaAs / GaAs PIN Epitaxial Wafer

1550nm GaInAsP / InP PIN Photodiode Structure

Estrutura do Fotodiodo InGaAs

GaAs / AlGaAs / GaAs epi bolacha

GaAs HBT Epi Wafer

Agora vamos listar algumas especificações:

Remark: GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)

aplicações do dispositivo

RF Switch, Power and low-noise amplifiers, Hall sensor, modulador óptico

estações de telefone celular ou de base: sem fio

Automotive radar, MMIC, RFIC, Comunicações de fibra óptica

GaAs Epi bolacha por LED serie / IR:

A inscrição 1.Config.geral:

1.1 Método Crescimento: MOCVD
1.2 GaAs epi wafer for Wireless Networking

1.3wafer GaAs epi para LED/ IR e LD / PD

2.Epi especificações wafer:

2.1 tamanho da bolacha: 2” de diâmetro

2.2 GaAs Epi Wafer Structure(from top to bottom):

P + GaAs

p-GAP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs / AlAs

Amortecedor

substrato GaAs

Sepcification 3.Chip (Base de Dados em 9mil * fritas 9mil)

3.1 Parâmetro

Chip Tamanho 9mil * 9mil

Espessura 190 ± 10um

diâmetro eléctrodo 90um ± 5um

3.2 caracteres óptico-eléctricos (Ir = 20mA, 22 ℃)

Comprimento de onda de 620 ~ 625nm

tensão direta 1.9 ~ 2.2V

≥10v inversa tensão

Inversa 0-1uA atual

3,3 caracteres intensidade da luz (Ir = 20 mA, 22 ℃)

IV (MCD) 80-140

3.4 Epiwafer avelength

Métodos de crescimento: MOCVD, MBE

epitaxia = crescimento de película com uma relação cristalográfica entre o filme e o substrato homoepitaxy (autoepitaxy, isoepitaxy) = película e substrato são mesmo material heteroepitaxy = película e substrato são materiais diferentes. Parapara mais informações sobre os métodos de crescimento, por favor, clique no seguinte:https://www.powerwaywafer.com/technology.html

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

InGaAs Epitaxy Sensor / Detector:

Shortwave Infrared InGaAs Sensor

InGaAs SWIR Detector

InGaAs/InAlAs Epistucture for Single Photon Detector

Epiwafer for Photonic Integrated Chip:

AlGaAs Thin Film Epitaxy for Photonic Integrated Chips