We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
<1ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. [...]
Rectifier is a controllable rectifier device based on controllable silicon (thyristor) and centered on intelligent digital control circuits, which converts AC to DC. It is abbreviated as silicon rectifier, also known as thyristor rectifier, thyristor rectifier, etc. Silicon rectifier advantages include high efficiency, no mechanical noise and wear, [...]
2023-10-10meta-author
Single crystal KTaNbO3 is available from PAM-XIAMEN. Potassium tantalum niobate (KTa1-xNbxO3; KTN for short) crystal is a kind of multifunctional crystal material with high electro-optical coefficient, good piezoelectric and pyroelectric effects. It has significant electro-optical and photorefractive effects. The KTaNbO3 crystal is generally grown [...]
2019-05-07meta-author
Layer structure of 703nm Laser
We can offer Layer structure of 703nm Laser as follows:
Layer
Composition
Thickness (um)
Doping(cm-3)
Cap
P+- GaAs
0.2
Zn:>1e19
Cladding
p – Al0.8Ga0.2As
1
Zn:1e18
Etch stop
GaInP
0.008
Zn:1e18
Top barrier
Al0.45Ga0.55As
0.09
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Bottom barrier
Al0.45Ga0.55As
0.09
Undoped
Cladding
n – Al0.8Ga0.2As
1.4
Si:1e18
Buffer
n – GaAs
0.5
Si:1e18
Substrate
n+ – GaAs
S :>1e18
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
Layer No.
Material
Group
Repeat
Mole Fraction(x)
Strain(ppm)
PL(nm)
Thickness(nm)
Dopant
32
GaAs
–
–
–
–
–
156
C
31
Al(x)GaAs
–
–
0.04
–
–
50.5
C
30
Al(x)GaAs
–
–
0.87->0.04
–
–
20
C
29
Al(x)GaAs
–
–
0.87
–
–
59.7
C
28
Al(x)GaAs
–
16
0.04->0.87
–
–
20
C
27
Al(x)GaAs
–
0.04
–
–
51.5
C
26
Al(x)GaAs
–
0.87->0.04
–
–
20
C
25
Al(x)GaAs
–
0.87
–
–
59.7
C
24
Al(x)GaAs
–
–
0.04->0.87
–
–
20
C
23
Al(x)GaAs
–
–
0.04
–
–
32.9
C
22
Al(x)GaAs
–
–
0.80->0.04
–
–
20
C
21
Al(x)GaAs
–
–
0.98
–
–
20
C
20
Al(x)GaAs
–
–
0.8
–
–
61.6
C
19
GaAsP
–
–
–
–
–
–
UD
18
In(x)GaAs
–
–
–
–
970nm
–
UD
17
GaAsP
–
–
–
–
–
–
UD
16
In(x)GaAs
–
–
–
–
970nm
–
UD
15
GaAsP
–
–
–
–
–
–
UD
14
In(x)GaAs
–
–
–
–
970nm
–
UD
13
GaAsP
–
–
–
–
–
–
UD
12
Al(x)GaAs
–
–
0.87
–
–
59.7
Si
11
Al(x)GaAs
–
–
0.04->0.87
–
–
20
Si
10
Al(x)GaAs
–
–
0.04
–
–
51.5
Si
9
Al(x)GaAs
–
–
0.87->0.04
–
–
20
Si
8
Al(x)GaAs
–
6
0.87
–
–
59.7
Si
7
Al(x)GaAs
–
0.04->0.87
–
–
20
Si
6
Al(x)GaAs
–
0.04
–
–
51.5
Si
5
Al(x)GaAs
–
30
0.92->0.04
–
–
20
Si
4
Al(x)GaAs
–
0.92
–
–
59.8
Si
3
Al(x)GaAs
–
0.04->0.92
–
–
20
Si
2
Al(x)GaAs
–
0.04
–
–
51.5
Si
1
GaAs
–
–
–
–
–
500
Si
4 inch GaAs substrate Si doped; [...]
2021-04-02meta-author
PAM XIAMEN offers Indium Foil.
Indium ( In ) Foil: 100 mm (W) x 100 mm ( L) x 0.1 mm ( T)
Polycrystal In Foil
Purity: > 99.995%
Size: 0.10 mm thickness x 100mm width x 100 mm Length
Surface finish: as cold rolling [...]
2019-05-08meta-author