Veeco MBE reactor for laser diodes
IPG Photonics adds 4th Veeco MBE reactor for laser diodes
Aug 29, 2012
The tool will be used to manufacture gallium arsenide based devices
Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation.
The system was delivered to [...]
2012-08-30meta-autor
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-autor
Products
Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows:
1)GaN epitaxial growth on sapphire template;
Conduction Type: Si [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-autor
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
2013-09-03meta-autor
PAM XIAMEN offers Silicon Ingots.
Material Description
4″Ø×219mm p-type Si:B[110]±1.5°, (59-67)Ohmcm, RRV<2.4%, One SEMI Flat, Diameter=(100.6-100.8) mm, C<3E16/cc, O2<9E17/cc
4″Ø ingot p-type Si:B[110] ±2°, Ro: 0.001-0.010 Ohmcm, Ground, SEMI
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
4″Ø ingot p-type Si:B[111], [...]
2019-03-08meta-autor
