GaN substrate

What we provide:

Item	undoped N-	Si doped N+	Semi-insulating	P+
Freestanding GaN substrate	yes	yes	yes
GaN on sapphire	yes	yes	yes	yes
InGaN on sapphire		yes	***
AlN on sapphire			yes
LED wafer	(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)

Freestanding GaN substrate/GaN on sapphire/LED wafer:

 

For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:

http://www.qualitymaterial.net/products_7.html

 

InGaN on Sapphire:

 

For specification of InGaN on sapphire template, pleas view InGaN substrate:

https://www.powerwaywafer.com/InGaN-Substrates.html

 

AlN on Sapphire:

 

For specification of AlN on sapphire template, pleas view AlN substrate:

http://www.qualitymaterial.net/AlN-Substrate.html

 

AlGaN/GaN on Sapphire：

 

For AlGaN/GaN on sapphire template, please view AlGaN/GaN:

https://www.powerwaywafer.com/GaN-HEMT-epitaxial-wafer.html

Lattice constant of GaN substrate

Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction

GaN,Wurtzite sructure. The lattice constants a vs. temperature.

GaN,Wurtzite sructure. The lattice constants c vs. temperature

Properties of GaN substrate

PROPERTY / MATERIAL	Cubic (Beta) GaN	Hexagonal (Alpha) GaN
.	.	.
Structure	Zinc Blende	Wurzite
Space Group	F bar4 3m	C46v ( = P63mc)
Stability	Meta-stable	Stable
Lattice Parameter(s) at 300K	0.450 nm	a0 = 0.3189 nm
		c0 = 0.5185 nm
Density at 300K	6.10 g.cm-3	6.095 g.cm-3
Elastic Moduli at 300 K	. . .	. . .
Linear Thermal Expansion Coeff.	. . .	Along a0: 5.59×10-6 K-1
at 300 K		Along c0: 7.75×10-6 K-1
Calculated Spontaneous Polarisations	Not Applicable	– 0.029 C m-2
		Bernardini et al 1997
		Bernardini & Fiorentini 1999
Calculated Piezo-electric Coefficients	Not Applicable	e33 = + 0.73 C m-2
		e31 = – 0.49 C m-2
		Bernardini et al 1997
		Bernardini & Fiorentini 1999
		A1(TO): 66.1 meV
		E1(TO): 69.6 meV
Phonon Energies	TO: 68.9 meV	E2: 70.7 meV
	LO: 91.8 meV	A1(LO): 91.2 meV
		E1(LO): 92.1 meV
Debye Temperature		600K (estimated)
		Slack, 1973
	. . .	Units: Wcm-1K-1
		1.3,
		Tansley et al 1997b
		2.2±0.2
		for thick, free-standing GaN
		Vaudo et al, 2000
		2.1 (0.5)
		for LEO material
		where few (many) dislocations
Thermal Conductivity		Florescu et al, 2000, 2001
near 300K
		circa 1.7 to 1.0
		for n=1×1017 to 4×1018cm-3
		in HVPE material
		Florescu, Molnar et al, 2000
		2.3 ± 0.1
		in Fe-doped HVPE material
		of ca. 2 x108 ohm-cm,
		& dislocation density ca. 105 cm-2
		(effects of T & dislocation density also given).
		Mion et al, 2006a, 2006b
Melting Point	. . .	. . .
Dielectric Constant	. . .	Along a0: 10.4
at Low/Lowish Frequency		Along c0: 9.5
Refractive Index	2.9 at 3eV	2.67 at 3.38eV
	Tansley et al 1997b	Tansley et al 1997b
Nature of Energy Gap Eg	Direct	Direct
Energy Gap Eg at 1237K		2.73 eV
		Ching-Hua Su et al, 2002
Energy Gap Eg at 293-1237 K		3.556 – 9.9×10-4T2 / (T+600) eV
		Ching-Hua Su et al, 2002
Energy Gap Eg at 300 K	3.23 eV	3.44 eV
	Ramirez-Flores et al 1994	Monemar 1974
	.	.
	3.25 eV	3.45 eV
	Logothetidis et al 1994	Koide et al 1987
		.
		3.457 eV
		Ching-Hua Su et al, 2002
Energy Gap Eg at ca. 0 K	3.30 eV	3.50 eV
	Ramirez-Flores et al1994	Dingle et al 1971
	Ploog et al 1995	Monemar 1974
Intrinsic Carrier Conc. at 300 K	. . .	. . .
Ionisation Energy of . . . Donor	. . . .	. . . .
Electron effective mass me* / m0	. . .	0.22
		Moore et al, 2002
Electron Mobility at 300 K	. . .	.
for n = 1×1017 cm-3:		ca. 500 cm2V-1s-1
for n = 1×1018 cm-3:		ca. 240 cm2V-1s-1
for n = 1×1019 cm-3:		ca. 150 cm2V-1s-1
		Rode & Gaskill, 1995
		Tansley et al 1997a
Electron Mobility at 77 K	. . . .	. . . .
for n = . .
Ionisation Energy of Acceptors	. . .	Mg: 160 meV
		Amano et al 1990
		Mg: 171 meV
		Zolper et al 1995
		Ca: 169 meV
		Zolper et al 1996
Hole Hall Mobility at 300 K	. . .	. . . .
for p= . . .
Hole Hall Mobility at 77 K	. . . .	. . .
for p= . . .
.	Cubic (Beta) GaN	Hexagonal (Alpha) GaN

Application of GaN substrate

Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.