com base GaN LED epitaxial Wafer

com base GaN LED epitaxial Wafer

GaN do PAM-XIAMEN (nitreto de gálio) à base de LED bolacha epitaxial é de alto brilho diodos emissores de luz ultra-azul e verde (LED) e diodos laser (LD) de aplicação.

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The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

LED Epitaxial Wafer

Item Size Orientação Emission Wavelength Thickness   Substrate Superfície Usable area
 PAM-50-LED-BLUE-F 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-BLUE-PSS 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-BLUE-F 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-PSS 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-150-LED-BLUE 150mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-SIL 50mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-100-LED-BLUE-SIL 100mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-150-LED-BLUE-SIL 150mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-200-LED-BLUE-SIL 200mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-50-LED-GREEN-F 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-GREEN-PSS 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-GREEN-F 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-GREEN-PSS 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-150-LED-GREEN 150mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-RED-GAAS 100mm 15°±0.5° red light 610-630nm / GaAs P/L >90%
 PAM-100-LED-RED-GAAS 100mm 15°±0.5° red light 850nm / GaAs P/L >90%
 PAM-50-LED-UV-365-PSS 50mm 0°±0.5° UVA 365 nm 425um+/-25um Sapphire
 PAM-50-LED-UV-405-PSS 50mm 0°±0.5° UVA 405 nm 425um+/-25um Sapphire
 PAM-50-LED-UVC-275-PSS 50mm 0°±0.5° UVC 275nm 425um+/-25um Sapphire
 PAM-50-LD-BLUE-405-SIL 50mm 0°±0.5° blue light 405nm / Silicon P/L >90%
 PAM-50-LD-BLUE-450-SIL 50mm 0°±0.5° blue light 450nm / Silicon P/L >90%


2. InGaN/
GaN(gallium nitride) based LED Epitaxial Wafer

As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

GaN em Al2O3-2” epi wafer Specification (LED epitaxial wafer)

White: 445~460 nm
Blue:  465~475 nm
Green: 510~530 nm

Técnica 1. Crescimento - MOCVD
diâmetro 2.Wafer: 50,8 milímetros
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer tamanho padrão: 3X2X1.5μm

3. Wafer structure:

estrutura camadas Thickness(μm)
p-GaN 0.2
p-AlGaN 0.03
InGaN / GaN (área activa) 0.2
n-GaN 2.5
u- GaN 3.5
Al2O3 (Substrato) 430

 

4. Wafer parameters to make chips:

em Cor Chip Tamanho Características Aparência
PAM1023A01 Azul 10mil x 23mil Iluminação
Vf = 2.8 ~ 3.4V backlight LCD
Po = 18 ~ 25mW aparelhos móveis
Wd = 450 ~ 460nm Consumidor eletrônico
PAM454501 Azul 45mil x 45mil Vf = 2.8 ~ 3.4V iluminação geral
Po = 250 ~ 300 mW backlight LCD
Wd = 450 ~ 460nm exibição ao ar livre

 

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

Iluminação
luz de fundo LCD
aparelhos móveis
Consumidor eletrônico

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

Em relação GaAs wafer LED, eles são cultivados por MOCVD, veja abaixo comprimento de onda de GaAs LED bolacha:
Vermelho: 585nm, 615nm, 620 ~ 630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

 

Por estas GaAs detalhe LED especificações wafer, visite:GaAs Epi bolacha por LED

Para UV LED especificações wafer, visite:UV LED Epi Wafer  

Para wafer LED em especificações de silício, por favor visite:LED Wafer on Silicon

Para especificações Azul GaN LD Wafer, visite: Azul GaN LD Wafer

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

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