substrato de GaN autoportante

Descrição do produto

substrato de GaN autoportante

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrato de bolacha  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our substrato de GaN for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

Especificação de substrato autoportante GaN

 Aqui mostra especificação de detalhe:

4″ N type Si doped GaN（Gallium Nitride) Free-standing Substrate

4″ N type Undoped GaN（Gallium Nitride) Free-standing Substrate

4″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

2″ Si doped GaN（Gallium Nitride) Free-standing Substrate

2″ Undoped GaN（Gallium Nitride) Free-standing Substrate

2″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

15 milímetros, 10mm, 5 milímetrosFree-standingGaN substrato

Nota:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Aplicação de GaN substrato

Iluminação de estado sólido: dispositivos de GaN são usados ​​como ultra-alto brilho diodos emissores de luz (LEDs), TVs, automóveis e iluminação geral

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Estações Base sem fio: transistores de potência de RF

Acesso sem fio de banda larga: MMICs alta frequência, RF-Circuits MMICs

Sensores de Pressão: MEMS

Sensores de calor: detectores de Pyro-elétricos

Power Condicionado: sinal misto GaN Integração / Si

Automotive Electronics: produtos eletrônicos de alta temperatura

De energia Linhas de Transmissão: eletrônica de alta tensão

Sensores Quadro: detectores de UV

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) ligas perfeito para a criação de material da célula solar. Devido a esta vantagem, células solares InGaN cultivadas em substratos de GaN estão prestes a se tornar uma das mais importantes novas aplicações e mercado em crescimento para wafers de substrato de GaN.

Ideal para HEMTs, FETs