Os materiais de nitreto do Grupo III são um tipo de material de gap direto, que tem as vantagens de um gap largo, forte estabilidade química, alto campo elétrico de quebra e alta condutividade térmica. Eles têm amplas perspectivas de aplicação nas áreas de dispositivos emissores de luz eficientes e dispositivos eletrônicos de potência. Assim, alterando a composição de In, a largura da lacuna de banda dos materiais InGaN compostos ternários pode ser continuamente ajustada na faixa de 1,95eV a 3,40eV, o que é adequado para a região ativa de diodos emissores de luz (LED) e lasers (LD) . PAM-XIAMEN é capaz de oferecerbolacha epitaxialde InGaN / GaN MQW (poço quântico multi) em substrato de Si para fabricação de diodo laser com comprimento de onda de 405nm. Especificações detalhadas, consulte a tabela abaixo:

1. 405nm Violet LD Wafer Baseado na Estrutura InGaN/GaN MQW

2. Applications of High-Power Lasers Grown on InGaN / GaN Multiquantum Wells

Lasers based on GaN material systems (GaN, InGaN and AlGaN) expand the wavelength of semiconductor lasers to the visible spectrum and ultraviolet spectrum, as shown in Figure below. It has great application prospects in display, lighting, medical, national defense and security, metal processing and other fields.

Wavelength Spectrum of GaN Materials (GaN, InGaN and AlGaN), from Visible to Ultraviolet

Among all the laser diodes, the development and application of 405 nm GaN laser have promoted the development of high-density optical storage, laser direct write lithography and light curing industries.

3. Why Epitaxial InGaN / GaN MQW Materials on Silicon Substrate?

The technology of GaN based semiconductor materials and devices on silicon substrate can not only greatly reduce the manufacturing cost of GaN based optoelectronics and electronic devices by virtue of large size, low-cost silicon wafers and their automated process lines, but also is expected to provide a new path for silicon based optoelectronic integration. Direct growth of InGaN / GaN laser diode on silicon substrate materials makes it possible for GaN based optoelectronic devices to be organically integrated with silicon based optoelectronic devices.

GaN LD wafer with blue emission também pode ser fornecido. Para informações adicionais, consultehttps://www.powerwaywafer.com/blue-gan-ld-wafer.html.

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

Para obter mais informações, entre em contato conosco pelo e-mail victorchan@powerwaywafer.com e powerwaymaterial@gmail.com.