PAM XIAMEN offers Fe2O3 crystal .
Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP
Specifications:
Crystal: Alpha-Fe2O3 natural source with defects
Purity: >99.95%
Size: [...]
2019-04-19meta-author
High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
2020-08-25meta-author
PAM XIAMEN offers LiF crystal.
LiF (100) 10x10x1.0mm, 1SP
LiF (100) 10x10x1.0mm, 2SP
LiF (111) 10x10x1.0mm, 1SP
LiF (111) 10x10x1.0mm, 2SP
LiF (110) 10x10x1.0mm, 1SP
We also can offer LiF polycrystal (PAM161011-LIF):
Diameter=15mm
Length=25mm
Purity>99.99%
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
Found in [...]
2019-05-08meta-author
PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of Czochralski grown silicon.
Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications.
1. Specifications [...]
2019-02-14meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
2019-12-30meta-author