PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
3″
300
P/P
0.3-0.4
SEMI Prime
p-type Si:B
[111]
3″
250
P/E
0.10-0.12
SEMI Prime
p-type Si:B
[111]
3″
300
P/E
0.03-0.04
SEMI Prime
p-type Si:B
[111]
3″
380
P/E
0.014-0.015
SEMI Prime
p-type Si:B
[111-1°]
3″
1000
P/E
0.014-0.016
SEMI Prime
p-type Si:B
[111]
3″
600
P/P
0.005-0.020
SEMI Prime
p-type Si:B
[111-3.5°]
3″
380
P/E
0.004-0.005
SEMI Prime
n-type Si:P
[510]
3″
1000
P/E/P
5-10
Prime, NO Flatst
n-type Si:P
[100]
3″
9500
P/E
15-22
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
300
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
380
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
3000
P/E/P
10-12
Prime, NO Flats, Individual cst
n-type Si:P
[100]
3″
1000
P/E
6-10
Prime, NO Flatst
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
300
P/P
1-20
SEMI Prime
n-type Si:P
[100]
3″
345
P/P
1-100
SEMI
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers high-quality Ag — Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A [...]
2019-04-16meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
76.2
N
Phos
FZ
-100
>3000
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
76.2
N
Phos
CZ
-100
350-400
P/E/OX
PRIME
76.2
N
As
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
N
Phos
FZ
-100
>3000
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/WTOx
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
400-450
P/E
PRIME
76.2
N
Phos
CZ
-100
450-500
P/P
PRIME
76.2
N
Phos
CZ
-100
500-550
P/E
PRIME
76.2
N
Phos
CZ
-100
950-1000
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers Nd2Ga5O12 single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
(Cubic)
GGG
Gd3Ga5O12
YSGG
Y3Sc2Ga3O5
S-GGG(CaMgZr:GGG)
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
NGG
Nd3Ga5O12
GYSGG
Gd0.63Y2.37Sc2Ga3O12
GSGG
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 [...]
2019-05-14meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111).
2″ Diameter Wafer
2″ wafers(111)
Ge <111> undoped
Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm
Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm
Ge<111> [...]
2019-04-23meta-author
PAM XIAMEN offers NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Product Information: Crystals can be customized
Formulation: Ca4YO(BO3)3 (YCOB)
Size: from 5 x 5 mm to 50 x 50 mm
Thickness: 50 ~ 40 mm
Optical Homogeneity: δn < 10-5 cm-1
Transparency Range: 202 ~ 25000 nm
Surface Finish: 1/8 λ
Surface [...]
2019-03-11meta-author