PAM XIAMEN offers LiNbO3 Crystal.
LiNbO3 Crystal has unique electro-optical, piezoelectric, photoelastic and nonlinear optical properties. They are strongly birefringent. They are used in laserfrequency doubling, nonlinear optics, Pockels cells, optical parametric oscillators, Q-switching devices for lasers, other acousto-opticdevices, optical switches for gigahertz frequencies, [...]
2019-05-07meta-author
Highlights
•
A effective annealing method was adopted for CdMnTe:In crystals with different thickness.
•
The crystal quality and the detector performance were improved remarkably after annealing.
•
The detectors can meet the requirement of gamma-ray detection for different energies.
Abstract
Radiation detectors with different thickness are needed to detect gamma rays [...]
2017-12-11meta-author
Effects of mosaic structure on the physical properties of CdZnTe crystals
Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
2013-09-23meta-author
PAM XIAMEN offers Stainless Steel Substrate ( Polycrystaline) .
Stainless Steel Substrate: 1″ Dia x 0.3 mm, as cold rolling
Substrate dimension: 25.4 diameter x 0.3 mm thickness, ( 1″ Dia. x0.3 mm)
Properties
Yield Strength:(N/mm2)≥205
Tensile strength :≥520
Elogation: (%)≥40
Density : 7.93 g·cm-3
Resistivity: 0.73 Ω·mm2·m-1 [...]
2019-04-19meta-author
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]
2013-03-19meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author