Produtos

GaN HEMT Epitaxial Wafer

GaN Wafer

PAM-XIAMEN oferece substrato gálio nitreto bolacha para UHB-LED, gálio nitreto de bolacha, LD e outros dispositivos semicondutores.

Substrato de bolacha de SiC (carboneto de silício)

SiC Wafer

Silicon Carbideï¼SiC) Wafers PAM-XIAMENÂ oferece carboneto de silício wafers crytal e epitaxia, que é usado para optoeletrônicos Devices, alta dispositivos de energia, dispositivos de alta temperatura, alta freqüência dispositivos de energia

GaAs Wafer

GaAs Wafer

PAM-XIAMEN oferece substrato gálio arsenieto de bolacha e epitaxia para LED, LD e aplicações Microelectronics

GaSb Wafer

composto Semiconductor

PAM-XIAMEN oferece Indium Semiconductor Wafer: InSb, InP, InAs, GaSb, GaP

Ge (germânio) Cristais individuais e bolachas

germânio Wafer

PWAMÂ oferece materiais semicondutores, (Ge) monocristais germânio e bolachas cultivadas por VGF / LEC

produtos

CdZnTe Wafer

Cádmio zinco Telluride (CdZnTe ou CZT) é um novo semicondutor

produto wafer

Silicon Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

produto wafer

de fabricação de wafer

PAM-XIAMEN Oferece placa fotorresistente com fotorresistente e fotomáscara, e fornecer Nanolithography (fotolitografia): Preparação da superfície, Photoresist aplicar, coza macio, alinhamento, de exposição, de desenvolvimento, duro assar, Develop inspeccionar, Etch, remoção Photoresist (tira), controlo final.

  • 12 "Prime Grade Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "wafers de silício 300 milímetros TOX (Si térmica Oxidação Wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Test Grade Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Epi bolacha por Laser Diode

    GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Flutuar-Zone Mono-Crystalline Silicon

    A PAM-XIAMEN pode oferecer wafer de silício de zona flutuante, que é obtido pelo método Float Zone. As hastes de silício monocristalino são obtidas através do crescimento da zona flutuante e, em seguida, processam as hastes de silício monocristalino em pastilhas de silício, chamadas pastilhas de silício da zona flutuante. Uma vez que a pastilha de silício fundida por zona não está em contato com o cadinho de quartzo durante o processo de silício por zona flutuante, o material de silício está em estado suspenso. Assim, é menos poluído durante o processo de fusão da zona flutuante de silício. O teor de carbono e o teor de oxigênio são menores, as impurezas são menores e a resistividade é maior. É adequado para a fabricação de dispositivos de energia e certos dispositivos eletrônicos de alta tensão.

  • Serviços de fundição de wafer

    PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy, 

    PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.

     

  • Teste Wafer Monitor de bolacha manequim Wafer

    Como fabricante de wafer fictício, a PAM-XIAMEN oferece wafer fictício de silicone / wafer de teste / wafer monitor, que é usado em um dispositivo de produção para melhorar a segurança no início do processo de produção e é usado para verificação de entrega e avaliação da forma do processo. Como as pastilhas de silício fictícias são frequentemente usadas para experimentos e testes, o tamanho e a espessura das mesmas são fatores importantes na maioria das ocasiões. wafer fictício de 100 mm, 150 mm, 200 mm ou 300 mm está disponível.

  • Cz Mono-Crystalline Silicon

    PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Epitaxial Silicon Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Wafer polido

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • gravura Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.

  • Fotoresiste de nanofabricação

    PAM-XIAMEN Oferece placa fotorresistente com fotorresistente