SiC bolacha substrato

Descrição do produto

PAM-XIAMEN oferece semicondutoresSubstrato de wafer de SiC, 6H SiCe4H SiC (carboneto de silício)em diferentes graus de qualidade para os fabricantes pesquisador e da indústria. Nós desenvolveuo crescimento de cristais de SiC tecnologia eSiC bolacha cristal processing technology, established a production line to manufacture SiC substrate, Which is applied in GaN epitaxy device (e.g. AlN/GaN HEMT regrowth), power devices, high-temperature device and optoelectronic devices. As a professional silicon carbide wafer company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab, we are devoted to continuously improve the quality of currently SiC substrates and develop large size substrates.

Aqui mostra especificação de detalhe:

1. SiC Wafer Specifications

1.1 4H SIC, N-TYPE, 6 ″ WAFER ESPECIFICAÇÕES

1.2 4H SIC, ALTA PUREZA SEMI-ISOLANTE (HPSI), 6 ″ ESPECIFICAÇÃO DE WAFER

4H SIC, V DOPED SEMI-ISOLANTE, ESPECIFICAÇÃO DA WAFER DE 6 ″

1.3 4H SIC, N-TYPE, 4 ″ WAFER ESPECIFICAÇÕES

1.4 4H SIC, SEMI-ISOLANTE DE ALTA PUREZA (HPSI), ESPECIFICAÇÃO DE WAFER DE 4 ″

4H SIC, V DOPED SEMI-ISOLANTE, ESPECIFICAÇÃO DE WAFER DE 4 ″

1.5 4H N-TYPE SIC, 3 ″ (76,2 mm) ESPECIFICAÇÕES DE WAFER

1.6 SIC SEMI-ISOLANTE 4H, 3 ″ (76,2mm) ESPECIFICAÇÕES DE WAFER

(Substrato de SiC semi-isolante de alta pureza (HPSI) está disponível)

1.7 4H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

1.8 4H SEMI-INSULATING SIC, 2″(50.8mm)WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

1.9 6H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

1.10 SiC Seed Crystal Wafer:

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom

1.11 SILICON CARBIDE MATERIAL PROPERTIES

2. About SiC Wafer

Silicon carbide wafer have excellent thermodynamic and electrochemical properties.

In terms of thermodynamics, the hardness of silicon carbide is as high as 9.2-9.3 on the Mohs at 20°C. It is one of the hardest materials and can be used to cut rubies. The SiC wafer thermal conductivity exceeds that of copper, which is 3 times that of Si and 8-10 times that of GaAs. And SiC wafer thermal stability is high, it is impossible to be melted under normal pressure.

In terms of electrochemistry, bare silicon carbide wafer has the characteristics of wide band gap and breakdown resistance. The band gap of SiC substrate wafer is 3 times that of Si, and breakdown electric field is 10 times that of Si, and its corrosion resistance is extremely strong.

Therefore, SiC-based SBDs and MOSFETs are more suitable for working in high-frequency, high-temperature, high-voltage, high-power, and radiation-resistant environments. Under the conditions of the same power level, SiC devices can be used to reduce the volume of electric drives and electronic controls, meeting the needs of higher power density and compact design. On the one hand, silicon carbide substrate wafer fabrication technology is mature, and the SiC wafer cost is competitive currently. On the other hand, the trend of intelligence and electrification continues to evolve. The traditional cars has brought huge demand for SiC power semiconductors. Thus, the global SiC wafer market is growing rapidly.

3. Q&A of SiC Wafer

3.1 What is the barrier of SiC wafer becoming a wide application same as silicon wafer?

1.Due to the physical and chemical stability of SiC, the crystal growth of SiC is extremely difficult, which seriously hinders the development of SiC semiconductor devices and their electronic applications.

2.Since there are many kinds of SiC structures with different stacking sequences (also known as polymorphism) , the growth of electronic grade SiC crystal is hindered. The polymorphs of SiC, such as 3C SiC, 4H SiC and 6h SiC.

3.2 What kind of SiC wafer do you offer?

What you need belongs to cubic phase, there are cubic (c), hexagonal (H) and rhombic (R). what we have are hexagonal, such as 4H and 6h, C is cubic, like 3C silicon carbide.

4. Please see below sub-catalogue:

4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer

100mm Silicon Carbide

6H SiC bolacha

PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate

SiC(Silicon Carbide) Boule Crystal

Sic Chips

HPSI SiC Wafer for Graphene Growth

Substrato de carbeto de silício espesso

Why do We Need High Purity Semi-insulating SiC Wafer?

Phonon Properties of SiC Wafer

Growth Facet

Why Does SiC Wafer Show Different Color?