Maximum diameter 12″
Height≤17″
High density≤2.19 g/cm3
High purity>99.99%
High cracking resistance (Excellent coefficient of thermal expansion)

Maximum diameter 8″
Height≤18″
Guarantee purity>99.99%
It can be used for many times (Excellent structure between the layers)
High crystal forming rate. (It can guarantee high crystal forming rate by adjusting anisotropy)

Maximum diameter 12″
Height≤17″
High density≤2.19 g/cm3
High purity>99.99%
High cracking resistance (Excellent coefficient of thermal expansion)

Height≤17″
High density≤2.19 g/cm3
High purity>99.99%
High cracking resistance (Excellent coefficient of thermal expansion)
No deformation at high temperature (It can resist the high temperature of 2300℃ in vacuum)
Long service life time

can resist the high temperature of 2300℃ in a vacuum environment and 2700℃ in ammonia atmosphere;
High purity (>99.99%). And it will not release gas impurities when services at high temperature;
Good toughness. It is similar to the hexagonal structure of graphite;
Good insulation at high temperature. The volume resistivity is 3.11×1011Ω·cm;
Chemical inertness. Good corrosion resistance of acid, alkali and organic solvent;
It can reduce the heat waste by preventing heat conduction

PBN material can resist the high temperature of 2300℃ in a vacuum and 2700℃ in ammonia atmosphere;
High purity (>99.99%). And it will not release gas impurities under high temperatures;
Good toughness. It is similar to the hexagonal structure of graphite;
Good insulation under high temperatures;
Chemical inertness. Good corrosion resistance of acid, alkali and organic solvent

Strong adhesion, be not easy to fall off;
To protect the graphite from corrosion;
To prevent the graphite from releasing carbon;
Insulation

Surface heating and good temperature distribution;
Not affected by magnetic field;
High-purity, It releases little gas at a great heat;
It can be adapted for contact heating;
High heating rate;
Long service life;
Good corrosion resistance of acid, alkali and organic solvent

MOCVD（Metal-organic Chemical Vapor Deposition）is a special process to grow semiconductor thin films on the matrix. It was developed on the basis of vapor phase epitaxial (VPE) growth, and has become a new technology in VPE. The source materials of crystals grown by MOCVD are metal organic compound and hydride. The metal generally from group Ⅱ or Ⅲ when the later is made by the elements of group V、Ⅵ. The vapor phase epitaxial growth on substrates follows the method of thermal decomposition reaction, and gains semiconductive chemical compounds of the group Ⅲ-V,Ⅱ-Ⅵ, and their thin layer crystal materials of multiple solid solution.