PAM XIAMEN offers Si-Ge alloy crystal.
Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
2019-05-16meta-author
PAM XIAMEN offers Mo-Coated Sodalime Glass Wafer. Here is a wafer list for your reference:
PAM210713-MO
Item
Length
Width
Thickness
Surface Finished
Mo-coating Sodalime Glass Wafer
100 mm
100 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Substrate
20 mm
15 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Sheet
25 mm
25 mm
1000 nm
Single side polished
Mo-coated Sodalime Glass Wafer
100 mm
100 [...]
2019-04-28meta-author
PAM XIAMEN offers 150mm&200mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
150
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-550
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-600
P/E
TEST
150
N
Phos
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
N
Phos
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-550
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-600
P/E
TEST
150
P
Boron
CZ
-100
.001-.005
650-700
P/E
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
150
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
N
Si
VGF
-100
650-700
P/E
PRIME
150
P
Zn
VGF
-100
650-700
P/E
PRIME
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
150
Si
Undoped
VGF
-100
>1E7
650-700
P/E
PRIME
150
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Round
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Shipping Cassette
ePak
Holds25Wafers
Clean Room
200
N
Phos
CZ
-100
1-20
700-750
P/E/OX
PRIME
200
P
Boron
CZ
-100
1-100
600-800
P/E
TEST
200
P
Boron
CZ
-100
1-20
700-750
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-03-04meta-author
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
2012-05-21meta-author
GaN
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orie
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2312
100mm
P
B
<100>
0-100
500um
SSP
Test
The ever-versatile 4″ Test-Grade. One of our most popular items!
PAM2313
100mm
P
B
<100>
0-100
500um
DSP
Test
Double-Side Polished Silicon Wafers at affordable prices!
PAM2314
100mm
N
P
<100>
0-100
500um
DSP
Test
Double Side Polished silicon wafers, test grade.
PAM2315
100mm
N
P
<100>
0-100
500um
SSP
Test
Silicon wafers, N-type, Test [...]
2019-02-19meta-author
Etching is a technique used for micromachining to chemically remove layers from the surface of a wafer during manufacturing. Etching techniques can be divided into wet etching and dry etching. PAM-XIAMEN can provide silicon etching wafer for your applications.
1. Wet Chemical Etching
The mechanism of [...]
2022-05-30meta-author