In Q4 Discount prices for Universities and Research Institutes

In Q4 Discount prices for Universities and Research Institutes

We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s stock, currently stock size: 5mm*5.5mm, 10mm*10.5mm. The special prices are valid for the orders that PAM-XIAMEN will receive from now till December the 31st, 2012.

For this special offer we introduce also a simplified purchase procedure which results in a prompt shipment. In order to get your quotation please visit our website atwww.powerwaywafer.com and select your desired quantity of GaN wafers. A quotation will follow within 24 hours after receiving your email. You can alternatively contact us via e-mail at sales@powerwaywafer.com. We look forward working with you!

2012-10-18

Silicon Ingots-3

PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm) FZ 4″Ø ingot Intrinsic [...]

2019-03-08meta-author

BaTiO3-1

PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrate (100) BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]

2019-04-17meta-author

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs, n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI [...]

2019-03-06meta-author

YSZ crystal-3

PAM XIAMEN offers YSZ crystal. YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter. YSZ substrates (111) YSZ (111) 5x5x0.5mm, 1SP” YSZ (111) 10x10x0.5mm, [...]

2019-05-21meta-author

Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing

In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]

2019-12-30meta-author

NDGAO3 NEODYMIUM GALLATE CRYSTAL SUBSTRATE

PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates. Main Parameters Growth Method orthogonal Unit cell constant a=5.43、b=5.50、c=7.71 Melt point（℃） 1600℃ Density 7.57g/cm3 Dielectric constants 25 Growth method hanging maneuver method Size 10×3, 10×5, 10×10, [...]

2019-03-14meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

In Q4 Discount prices for Universities and Research Institutes

In Q4 Discount prices for Universities and Research Institutes

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