PAM XIAMEN offers GaAs (110) crystal.
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2″D x 2.8 mm, as cut
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
GaAs, (110) ori. un-doped, 5x6x2.0mm, 2sp
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
GaAs, VGF Grown (110) ori. [...]
2019-04-22meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
Fundamental issues of device-relevant low temperature GaAs and related materials properties
In the past few years, a flurry of activity has been devoted to the studies and device applications of non-stoichiometric GaAs grown by molecular beam epitaxy at the extremely low temperature (LT) of 250 [...]
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Pack: Packed in 1000 class plastic bag [...]
2019-04-17meta-author
PAM XIAMEN offers P-type Silicon. Please send us emails if you need other specs and quantity.
See below for a short list of our p-type silicon substrates.
P-type Silicon
Si 50.8mm P-type Boron Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
Si 76.2mm P-type Boron Doped (100) 1-10 [...]
2019-02-13meta-author
