R-Plane Sapphire Substrate with SSP
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No | Item | Specification |
1 | Material | High Purity Al2O3 |
2 | Diameter | 50.8土0.1mm |
3 | Orientation | R-plane<1-102>土0.2° |
4 | Thickness | 430土15um |
5 | TTV | ≤15um |
6 | Bow | ≤10um |
7 | Warp | ≤15um |
8 | Primary Flat Length | 16.0土1.0mm |
9 | Front suface Roughmess(Ra) | Ra≤0.3nm |
10 | Bock Surtace Roughness(Ra) | 0.8~1.2um |
11 | Primary Flat Orienation | A-plane+0.2° |
12 | Surtace onentation | R-Plane土0.2° |
13 | Laser Mark | back side or front side or no laser mark |
14 | Package | 25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom |
3”,R-Plane Sapphire Substrate with SSP
No | ltem | Specification |
1 | Material | High Purity Al2O3 |
2 | Diameter | 76.2土0.2mm |
3 | Thickness | 350土25um |
4 | Orientation | R-plane<1-102>土0.2° |
5 | Primary Flat Orientation | 45+2CCCW on R |
6 | Primary Flat Lengin | 22.0土1.0mm |
7 | TTV | ≤25um |
8 | Bow | -25~0μm |
9 | Warp | ≤30um |
10 | TIR | ≤15um |
11 | Front Surtace Roughness(Ra) | Miror polished,EPl-Ready,Ra≤0.3nm |
12 | Back Surface Roughness(Ra) | 0.8~12um |
13 | Laser Mark | Back or Front Side(Backside Preterred) |
14 | Package | 25pcs/Cassette,Vacum-sealed.Nitrogen- Tilled,Class-100 Cleanroom |
Remark: we also can offer 4”size R-plane Sapphire substrate. Cleanliness can not meet the requirement for microelectronics semiconductor.
For more information, please contact us email at [email protected] and [email protected]