PAM-XIAMEN can supply GaN wafers for LD, LED, HEMT and other applications. You can click following links for more GaN wafer specifications:
GaN based LED epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html;
GaN HEMT epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html;
Blue GaN LD wafer: https://www.powerwaywafer.com/blue-gan-ld-wafer.html.
Why you need to choose GaN wafers for power devices?
The short video: https://youtu.be/5Uk9HVzQWAc explains why, as follows:
GaN is a wide-bandgap compound semiconductor material with a stable hexagonal crystal structure.
Compared with traditional silicon technology, GaN not only has excellent performance and a wide range of applications, but also can effectively reduce energy loss and space occupation.
In some R&D applications, silicon devices have reached their physical limits in energy conversion. GaN can organically unify the advantages of charging efficiency, switching speed, product size and heat resistance, making it more popular.
The use of GaN technology can not only meet the energy demand, but also effectively reduce carbon emissions.
Carbon emissions of GaN devices are 10 times smaller than conventional silicon-based devices.
If data centers using silicon chips in the world are upgraded to use GaN power chips, the global data centers will reduce energy waste by 30-40%, which is equivalent to saving 100 MWh of solar energy and reducing 125 million tons of carbon dioxide emissions.
The appeal of GaN goes beyond performance and system-level energy utilization improvements.
Manufacturing a GaN power chip can reduce chemical and energy consumption by 80% during the manufacturing process, and saving more than 50% of packaging materials.
So, the environmental advantages of GaN are far greater than that of traditional slow-speed silicon materials.