Red Infrared AlGaAs /GaAs LED Epi-Wafer

Red Infrared AlGaAs /GaAs LED Epi-Wafer

PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs /GaAs LED epi-wafer with wavelength 850-880 nm and 890-910nm:

Structure of infrared AlGaAs /GaAs LED epi-wafer: PAM-190723-LED

StructureThickness, umTypeCompositionCC, cm-3
Wide-gap window1рAlхGa1-хAs (х=0,25-0,3)(2-5) ∙1018
Barrier layer0.06рAlхGa1-хAs (х=0,25-0,3)(0.8-1) ∙1018
Active layer GaAsundoped
 Al0,2Ga0,8As
Barrier layer0.06nAlхGa1-хAs (х=0,25-0,3)(0.5-1) ∙1017
Wide-gap window6nAlхGa1-хAs(1-2)∙1018
(х=0,3-0,35)
Stop layer0.1AlхGa1-хAs
(х=0,9-1)
Buffer layernGaAs
Substraten+GaAs

 

Where is the Red Infrared Wavelength?

See below picture of Wavelength of Light, the visible light is 380nm-780nm, and the infrared light is highlight in red circle:

 

 

Red Infrared Wavelength

Red Infrared Wavelength

 

 

 

 

 

 

 

 

 

For more information, please contact us email at [email protected] and [email protected]

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