Red Infrared AlGaAs /GaAs LED Epi-Wafer

Red Infrared AlGaAs /GaAs LED Epi-Wafer

PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs /GaAs LED epi-wafer with wavelength 850-880 nm and 890-910nm:

Structure of infrared AlGaAs /GaAs LED epi-wafer: PAM-190723-LED

Structure Thickness, um Type Composition CC, cm-3
Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018
Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018
Active layer   GaAs undoped
  Al0,2Ga0,8As
Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017
Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018
(х=0,3-0,35)
Stop layer 0.1 AlхGa1-хAs
(х=0,9-1)
Buffer layer n GaAs
Substrate n+ GaAs

 

Where is the Red Infrared Wavelength?

See below picture of Wavelength of Light, the visible light is 380nm-780nm, and the infrared light is highlight in red circle:

 

 

Red Infrared Wavelength

Red Infrared Wavelength

 

 

 

 

 

 

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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