Red Infrared AlGaAs /GaAs LED Epi-Wafer

Red Infrared AlGaAs /GaAs LED Epi-Wafer

PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:

1. Red Infrared AlGaAs / GaAs LED Epi Wafer


Structure Thickness, um Type Composition CC, cm-3
Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018
Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018
Active layer   GaAs undoped
Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017
Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018
Stop layer 0.1 AlхGa1-хAs
Buffer layer n GaAs
Substrate n+ GaAs


2. Where is the Red Infrared Wavelength?

See below picture of Wavelength of Light, the visible light is 380nm-780nm, and the infrared light is highlight in red circle:

Red Infrared Wavelength

Red Infrared Wavelength

3. Red Infrared AlGaAs / GaAs LED Epi Wafer Application

Red infrared wavelength of 850nm-880nm is mainly used for CCD camera & CMOS corresponding light source, infrared night vision device, data transmission, scanner and etc, while 890nm-910nm is mainly used as a money detector sensor and a blood oxygen monitor.

4. AlGaAs / GaAs LED Epi Wafer Technology

AlGaAs / GaAs epitaxy technology of PAM-XIAMEN’s epi wafer foundry for growing epi wafer materials includes molecular beam epitaxy(MBE) and metal organic compound vapor deposition epitaxy(MOCVD).

MBE is a method, in which one or more thermal molecular beams interact with the crystal surface to grow an epitaxial layer under ultra-high vacuum conditions. Strict control of the incident molecular or atomic beam can grow a superlattice structure, e.g. a structure composed of alternating thin layers of GaAs and AlxGaAs.

MOCVD is to use trimethylgallium or triethylgallium to interact with arsine to grow an epitaxial layer. In this way, the concentration, thickness and structure of the epitaxial layer can also be appropriately controlled. Compared with MBE, the MOCVD equipment and process are simpler, but the quality of epi in wafer by is higher.

5. FAQ for Red Infrared LED Epiwafer

Q1: Does your 850nm 4” epi have an etch stop between the P and N layers?

A: Yes, there are an etch stop between them.

Q2: What is the material of the buffer layer of red LED epi wafer? Is it a sacrificial material that we can undercut to release the LEDs (such as using hydrofluoric acid to undercut)?
A: The buffer layer of infrared LED wafer is GaAs, it can be moved by hydrofluoric acid

Q3: The LED chips on wafer are too big for our applications. Do you have wafers without no pre-patterning of chips and we can be do LED patterning by ourselves?

A: The red LED wafer we offered is just without patterned wafer, without contacts deposit, but please understand that we have to use chip to symbol the property to the wafers. So here I think you misunderstand it.

Q4:What materials other than GaAs-AlGaAs that you process in your foundry with bandgap in the visible and near-IR region?

A: InGaAsP/AlGaInP is workable.

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