PAM XIAMEN offers TeO2 Tellurium Dioxide Crystals.
Tellurium Dioxide, TeO2 is an excellent ascousto-optic (AO) crystal with high AO figure of merit, birefringence, good optical rotation and slow propagation velocity along [110] direction. The resolution of AO devices made of TeO2 crystals will increase several [...]
2019-03-15meta-author
PAM XIAMEN offers Mica disk.
Pure Mica Sheet
Highest Grade Mica Disks, 9.9mm diameter 10/pkg
Highest Grade Mica Disks, 20mm diameter 10/pkg
Highest Grade Mica Sheets, 15mm x 15mm (0.59” x 0.59″”), 0.15 to 0.177mm (0.006-0.007″”) thick, 10/pkg”
Hi-Grade Mica Sheets, 15mm x 15mm [...]
2019-05-13meta-author
PAM XIAMEN offers CERIUM FLUORIDE CEF3 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Cerium fluoride, CeF3, is a good scintillation crystal with high density and short decay time. Cerium fluoride crystal is a good material in measurement [...]
2019-03-11meta-author
The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]
2022-09-27meta-author
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
2018-04-26meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author