We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, Irvine (USA),Singapore-MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Yunosuke Ishikawa;Shinji Nagata;Ming Zhao;Tatsuo Shikama.
School of Engineering, Tohoku University, Sendai, Japan;Institute for Materials Research, Tohoku University, Sendai, Japan.
Picture of SIC:
Retention and release of ion implanted deuterium (D) and helium (He) in silicon carbide (SiC) were studied with respect to damage accumulation and annealing behavior using ion beam analysis techniques. α-SiC single crystals were irradiated by 10 keV D2+ and He+ at 300 and 770 K, and depth profiles of retained atoms and lattice disorder were measured during the implantation and successive heat treatments. For the sample pre-irradiated with He at a fluence of 1.0 × 1021 ions/m2, the thermal release of D atoms was completed at an annealing temperature of 1370 K, while the retained D atoms still remained in the sample without pre-irradiation. In contrast to the facilitated thermal release of D by He pre-irradiation, the He release temperature increased in the sample followed by D ion implantation. No significant difference of He retention and damage accumulation behavior was observed between the samples implanted at 300 and 770 K. The D retention and D-ion-induced disorder for 770 K implantation, was reduced to approximately 1/2 comparing to that of the sample implanted at 300 K. The D retention at 770 K was not affected by the He pre-implantation induced damage.
Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited
“… The samples used in this study were single crystal plates of α-SiC with 〈0 0 0 1〉 orientation
(Xiamen Powerway Advanced Material Co., Ltd.) with a size of 15 × 15 mm 2 and a density of
3.21 g/cm 3 . 10 keV He + and D 2 + were implanted into the sample at an angle of 28° from …”
About Xiamen Powerway Advanced Material Co., Ltd
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.
PAM-XIAMEN also offer GaAs/InP and GaN material from wafer substrate to epitaxial growth.
Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.
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PAM-XIAMEN is proud to offer semiconductor wafer inlcuidng SiC/GaN/GaAs/InP wafer with wafer or epitaxial wafer for all different kinds of projects. If you are looking for semiconductor wafer, send us enquiry today to learn more about how we can work with you to get you the substrate wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you! For more information, please visit our website:www.powerwaywafer.com, send us email at firstname.lastname@example.org or email@example.com.