SiC devices are made from silicon carbide(SiC) wafers. So, here comes a question: how to obtain a silicon carbide wafer? Generally, a SiC wafer is cut from cylindrical SiC boules. As for the cutting process, methods for cutting silicon carbide ingots are introduced here.
A diamond [...]
A process model of wafer thinning by diamond grinding
This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]
PAM XIAMEN offers single crystal LiTaO3.
LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP
LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp
LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp
LiTaO3 optical grade, Y-cut, 10x10x0.5 mm, 2sp
LiTaO3 saw grade, Y-cut, 10x10x0.5mm, [...]
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
SiC and GaN Wide Bandgap Device Technology
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial systems. SiC MESFETs currently achieve power densities of 4.0 W/mm with power added efficiencies in excess of 60% on a repeatable basis. They are commercially [...]
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]