Room-temperature direct bonding of germanium wafers by surface-activated bonding method

This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current–voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

source:iopscience

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Highlights •The barrier controlled trapping model was developed around extended defects. •Electron mobility and E-field distribution were distorted by space charge depletion region. •Extended defects act as a recombination-activated region. •The relationships between extended defects and detector performance were established. Transient current techniques using alpha particle source were utilized [...]

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Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Room-temperature direct bonding of germanium wafers by surface-activated bonding method

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