Due to the wide band gap of SiC wafer, SiC does not absorb part or almost all of the visible light. The wavelength of the absorbed light depends on the band gap, the energy levels of the main impurities and the excited energy levels [...]
2021-03-05meta-author
PAM-XIAMEN can offer epitaxy wafer of silicon for manufacturing integrated optical waveguide devices. The silicon epi wafer we offer is grown core layer of Si and lower cladding layer of SiO2 on Si substrate and the waveguide structure is ridged. Due to the large [...]
2022-09-05meta-author
Korea’s LED Industry Developments
Korea’s LED industry took off at a much later date than Japan or Taiwan, in fact it developed at around the same time as China, but has advanced at an accelerated rate. However, the country’s LED industry plummeted much sharply compared to Japan, [...]
2016-09-18meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide.
2 inches in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for microelectronics [...]
2019-07-02meta-author
PAM XIAMEN offers Carbon Substrate & Foam.
Graphene film on Ni/SiO2/Si
Applications:
Graphene electronics
Conductive coatings
Aerospace industry
Support for metalic catalysts
Microactuators
MEMS and NEMS
Chemical and bio sensors
Multifunctional Materials Based on Graphene
Graphene Research
Graphene film on Ni/SiO2/Si 100mm dia
Highly Oriented [...]
2019-04-18meta-author
Coulometric determination of arsenic in gallium arsenide crystal wafers
The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
