PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
PAM2595 | n–type Si:Sb | [111–4°] ±0.5° | 4″ | 420 | P/EOx | 0.008–0.018 {0.0138–0.0151} | SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal |
PAM2596 | n–type Si:Sb | [111–4.0°] ±0.5° | 4″ | 475 ±15 | P/E | 0.005–0.020 {0.0113–0.0156} | SEMI Prime, 2Flats, Empak cst |
PAM2597 | n–type Si:As | [111] | 4″ | 450 | P/E | 0.004–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2598 | n–type Si:As | [111] ±0.5° | 4″ | 750 | P/E | 0.004–0.006 | SEMI Prime, 2Flats, Empak cst |
PAM2599 | n–type Si:As | [111–4°] ±0.5° | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted |
PAM2600 | n–type Si:As | [111–4°] ±0.5° | 4″ | 325 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal |
PAM2601 | n–type Si:As | [111–4°] ±0.5° | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Back–side Sand–blasted with LTO seal, in Empak cassettes of 7 wafers |
PAM2602 | n–type Si:As | [111–2°] ±0.5° | 4″ | 400 | P/EOx | 0.001–0.004 {0.0018–0.0036} | SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst |
PAM2603 | n–type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2604 | n–type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2605 | n–type Si:As | [111] ±0.5° | 4″ | 1000 | P/E | 0.001–0.005 {0.0031–0.0040} | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm |
PAM2606 | n–type Si:As | [111–4°] | 4″ | ? | L/L | ? | SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°) |
PAM2607 | n–type Si:P | [112] ±0.5° | 4″ | 500 | P/P | 11–15 | SEMI Prime, 1Flat, in Empak cassettes of 2 wafers |
PAM2608 | Si | ? | 4″ | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
PAM2609 | Si | [110] ±0.5° | 4″ | 525 | C/C | ? | Empak cst |
PAM2610 | p–type Si:B | [100] | 4″ | 380 | OxP/EOx | 5–10 | SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick |
PAM2611 | Si | ? | 4″ | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
PAM2612 | n–type Si:P | [100] | 4″ | 500 | P/P | FZ 198–200 | SEMI Prime, 2Flats, Empak cst |
PAM2613 | Intrinsic Si:– | [100] | 4″ | 650 | P/P | FZ >10,000 | SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm |
PAM2614 | p–type Si:B | [110] ±0.5° | 4″ | 525 | P/E | 4–6 | SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF, Empak cst |
PAM2615 | p–type Si:B | [110] | 4″ | 525 | P/E | 2–10 | PF<111> SF 109.5° |
PAM2616 | p–type Si:B | [100] | 4″ | 300 | P/E | 800–5,400 | SEMI Prime, 1Flat, Empak cst |
PAM2617 | p–type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
PAM2618 | p–type Si:B | [100] | 4″ | 3000 | P/E/P | 10–15 | SEMI Prime, 1Flat, Individual cst |
PAM2619 | p–type Si:B | [100–6°] | 4″ | 250 | P/E | 8–12 | SEMI Prime, 2Flats, Empak cst |
PAM2620 | p–type Si:B | [100–2°] | 4″ | 300 | P/E | 6–7 | SEMI Prime, 2Flats, Empak cst |
PAM2621 | p–type Si:B | [100] | 4″ | 1000 | P/E | 6–7 | SEMI Prime, 2Flats, Empak cst |
PAM2622 | p–type Si:B | [100] | 4″ | 1600 | P/P | ~6 | SEMI Prime, 1Flat, Individual cst |
PAM2623 | p–type Si:B | [100–6°] | 4″ | 525 | P/E | 4–6 | SEMI Prime, 2Flats, Empak cst |
PAM2624 | p–type Si:B | [100] | 4″ | 200 | P/P | 1–20 | SEMI Prime, 1Flat, Empak cst |
PAM2625 | p–type Si:B | [100] | 4″ | 250 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2626 | p–type Si:B | [100] | 4″ | 300 | P/E/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2627 | p–type Si:B | [100–10°] | 4″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2628 | p–type Si:B | [100] | 4″ | 500 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2629 | p–type Si:B | [100–6°] | 4″ | 525 | P/E | 1–100 | SEMI Prime, 1Flat, Empak cst |
PAM2630 | p–type Si:B | [100] | 4″ | 1200 | P/P | 1–15 | SEMI Prime, 2Flats, Empak cst |
PAM2631 | p–type Si:B | [100] | 4″ | 800 | P/EP | 0.01–0.02 | SEMI Prime, 2Flats, Empak cst |
PAM2632 | p–type Si:B | [100] | 4″ | 3100 | P/P | CZ 0.006–0.009 | SEMI Prime, 2Flats, Individual cst |
PAM2633 | p–type Si:B | [100–6°] | 4″ | 525 | P/E | 0.0042–0.0047 | SEMI Prime, 2Flats, Empak cst |
PAM2634 | p–type Si:B | [100] | 4″ | 150 ±15 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, TTV<2μm |
PAM2635 | p–type Si:B | [111–3°] | 4″ | 300 | P/E | 3–4 | SEMI Prime, 2Flats, Empak cst |
PAM2636 | p–type Si:B | [111–4°] | 4″ | 525 | P/E | 1.5–6.0 | SEMI Prime, 1Flat, Empak cst |
PAM2637 | p–type Si:B | [111–3°] | 4″ | 400 | P/E | 0.015–0.018 | SEMI Prime, 1Flat, Empak cst |
PAM2638 | p–type Si:B | [111] | 4″ | 525 | P/E | 0.005–0.006 | SEMI Prime, 1Flat, Empak cst |
PAM2639 | p–type Si:B | [111–1.5°] | 4″ | 525 | P/E | 0.002–0.004 | SEMI Prime, 1Flat, Empak cst |
PAM2640 | p–type Si:B | [111] | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2641 | n–type Si:P | [110] | 4″ | 1000 | P/E | 12–15 | ?? |
PAM2642 | n–type Si:P | [100] | 4″ | 200 | P/P | 49–57 | SEMI Prime, 2Flats, Empak cst |
PAM2643 | n–type Si:P | [100] | 4″ | 400 | P/E | 32–70 | SEMI Prime, 2Flats, Empak cst |
PAM2644 | n–type Si:P | [100] | 4″ | 400 | P/P | 17–19 | Prime, NO Flats, Empak cst |
PAM2645 | n–type Si:P | [100] | 4″ | 700 | P/E | 14–18 | Prime, NO Flats, Empak cst |
PAM2646 | n–type Si:P | [100] | 4″ | 250 | P/E | 11–13 | SEMI Prime, 2Flats, Empak cst |
PAM2647 | n–type Si:P | [100] | 4″ | 400 | P/P | 10–18 | SEMI Prime, 2Flats, Empak cst |
PAM2648 | n–type Si:P | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst |
PAM2649 | n–type Si:P | [100] | 4″ | 259 | P/P | 3–5 | SEMI Prime, 2Flats, Empak cst |
PAM2650 | n–type Si:P | [100–4°] | 4″ | 525 | P/E/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2651 | n–type Si:P | [100–2°] | 4″ | 525 | P/E | >1 | SEMI Prime, 2Flats, Empak cst |
PAM2652 | n–type Si:P | [100] | 4″ | 1000 | P/P | 1–20 | SEMI Prime, 2Flats, Empak cst |
PAM2653 | n–type Si:P | [100] | 4″ | 2500 | P/P | 1–100 | SEMI Prime, 2Flats, Individual cst |
PAM2654 | n–type Si:Sb | [100] | 4″ | 450 | P/E | ~0.03 | SEMI Prime, 1Flat, Empak cst |
PAM2655 | n–type Si:Sb | [100] | 4″ | 400 | P/E | ~0.02 | SEMI Prime, 2Flats, Empak cst |
PAM2656 | n–type Si:Sb | [100] | 4″ | 600 | P/E | 0.01–0.03 | Strange Flats |
PAM2657 | n–type Si:Sb | [100–4°] | 4″ | 1500 | P/E/P | 0.005–0.030 | SEMI Prime, 2Flats, Empak cst |
PAM2658 | n–type Si:Sb | [100] | 4″ | 1500 | P/E/P | 0.001–0.030 | SEMI Prime, 2Flats, Empak cst |
PAM2659 | n–type Si:P | [111] | 4″ | 1500 | P/E | >20 | SEMI Prime, 2Flats, Empak cst |
PAM2660 | n–type Si:P | [111] | 4″ | 250 | P/E | 18–25 | SEMI Prime, 2Flats, Empak cst |
PAM2661 | n–type Si:P | [111] | 4″ | 250 | P/E | 18–25 | SEMI Prime, 2Flats, Empak cst |
PAM2662 | n–type Si:P | [111] | 4″ | 280 | P/E | 2–5 | SEMI Prime, 2Flats, Empak cst |
PAM2663 | n–type Si:P | [111] | 4″ | 2500 | P/P | 2.0–2.5 | SEMI Prime, 2Flats, Individual cst |
PAM2664 | n–type Si:P | [111] | 4″ | 280 | P/E | 1–2 | SEMI Prime, 2Flats, Empak cst |
PAM2665 | n–type Si:P | [111–4°] | 4″ | 525 | P/E | 1–15 | SEMI Prime, 1Flat, Empak cst |
PAM2666 | n–type Si:P | [111–1.5°] | 4″ | 525 | P/E | 1–2 | SEMI Prime, 2Flats, Empak cst |
PAM2667 | n–type Si:P | [111] | 4″ | 1000 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2668 | n–type Si:P | [111] | 4″ | 1000 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
PAM2669 | n–type Si:Sb | [111–4°] | 4″ | 450 | P/E | 0.025–0.045 | SEMI Prime, 2Flats, Empak cst |
PAM2670 | n–type Si:Sb | [111–2.5°] | 4″ | 625 | P/E | 0.021–0.023 | SEMI Prime, 2Flats, Empak cst |
PAM2671 | n–type Si:Sb | [111] | 4″ | 525 | P/E | 0.016–0.020 | SEMI Prime, 2Flats, Empak cst |
PAM2672 | n–type Si:Sb | [111–4°] | 4″ | 525 | P/E | 0.010–0.020 | SEMI Prime, 2Flats, Empak cst |
PAM2673 | n–type Si:Sb | [111–2°] | 4″ | 380 | P/E | 0.008–0.018 | SEMI Prime, 1Flat, Empak cst |
PAM2674 | n–type Si:Sb | [111–3°] | 4″ | 400 | P/E | 0.008–0.018 | SEMI Prime, 1Flat, Empak cst |
PAM2675 | n–type Si:Sb | [111–3°] | 4″ | 400 | P/E | 0.005–0.018 | SEMI Prime, 2Flats, Empak cst |
PAM2676 | n–type Si:As | [111] | 4″ | 450 | P/E | 0.004–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2677 | n–type Si:As | [111–3°] | 4″ | 400 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2678 | n–type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2679 | n–type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2680 | n–type Si:As | [111–2.5°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
PAM2681 | n–type Si:As | [111–3°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
PAM2682 | Intrinsic Si:– | [100] | 4″ | 525 | P/E | 400–1,000 | SEMI Prime, 1Flat, Empak cst |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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