PAM XIAMEN supply InAs wafer up to 2″” diameter.
InAs <100> doped
InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished
InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished
InAs (100), S-doped 2″ dia x 0.5 [...]
2019-05-06meta-author
PAM XIAMEN offers LiF Lithium Fluoride Crystal.
LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
2019-03-14meta-author
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
The ultra-high voltage gate turn-off thyristor (GTO) device based on 4H-SiC, under the action of bidirectional carrier injection and conductivity modulation effects, can withstand high voltage while obtaining high pass current, meeting the requirements of ultra high power applications in terms of power density and [...]
2023-11-17meta-author
PAM XIAMEN offers 450mm Silicon Wafers.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
2019-02-20meta-author
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html
1. Epitaxial Pits
Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread [...]
2024-03-21meta-author