PAM XIAMEN offers 8″ FZ Prime Silicon Wafer.
1. Specification of 8″ FZ Prime Silicon Wafer
8″ 200+/-0.2 mm
Double Side Polished
Prime FZ N type
resistivity 8000-14000Ωcm
orientation 100 ±0.5°
Thickness 625 +/- 5µm
Laser Mark None or SEMI
edge profile SEMI
Notch SEMI [...]
2019-06-28meta-author
At present, gallium nitride (GaN) technology is no longer limited to power applications, and its advantages are also infiltrating into all corners of the RF/microwave industry, and the impact on the RF/microwave industry is growing, and should not be underestimated, because it can be [...]
2019-03-19meta-author
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
PAM XIAMEN offers PbSe single crystal substrate.
Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
2019-05-14meta-author
PAM-XIAMEN provides GaAs epiwafer for MESFET devices, which is one FET epitaxial structure with modulated doping. Detailed epitaxial growth heterostructure is listed below for your reference. The electron migration rate of GaAs is 5.7 times higher than that of silicon, which is very suitable [...]
2022-12-09meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author