Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
PAM XIAMEN offers Silicon Nitride film on Silicon Wafer.
Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm
Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-29meta-author
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”&6” is on mass production by PVT. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. [...]
2018-05-04meta-author
As one of the leading GaN on silicon companies, PAM-XIAMEN offers GaN on Silicon wafer Substrate. Single crystal silicon wafer substrate is undoubtedly the most potential substrate material for growing III Nitride template due to the advantages of high quality, low price, easy cleavage and etc. The [...]
2019-04-22meta-author
Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm.
A high crystal quality GaN can be gained by depositing [...]
2020-03-18meta-author