PAM XIAMEN offers 3″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
p-type Si:B | [5,5,12] ±0.5° | 3″ | 380 | P/E | 1-10 | SEMI Prime |
p-type Si:B | [211] ±0.5° | 3″ | 525 | P/P | >10 | SEMI Prime |
p-type Si:B | [211] ±0.5° | 3″ | 525 | P/E | >10 | SEMI Prime |
p-type Si:B | [111-28° towards[001]] ±0.5° | 3″ | 400 | P/E | >20 | SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst |
p-type Si:B | [111-4°] ±0.5° | 3″ | 380 | P/E | 8-12 | SEMI Prime |
p-type Si:B | [111-4°] ±0.5° | 3″ | 380 | P/E | 8-12 | SEMI Prime |
p-type Si:B | [111] ±0.5° | 3″ | 508 | E/E | 0.792-1.008 | SEMI TES, TTV<2μm, Epak cst |
p-type Si:B | [111-4°] ±0.5° | 3″ | 381 | P/EOx | 0.01-0.02 {0.0145-0.0148} | SEMI Prime |
p-type Si:B | [111-4.0° towards[112]] ±0.5° | 3″ | 406 | P/E | 0.005-0.015 | SEMI Prime |
p-type Si:B | [111] | 3″ | 250 | P/E | 0.001-0.002 | SEMI Prime |
p-type Si:B | [111-4° towards[-211]] ±0.5° | 3″ | 890 | P/E | 0.001-0.005 | Test, Soft cst, Can be repolished for additional fee |
n-type Si:P | [510] ±0.5° | 3″ | 1000 | P/E | 5-10 | Prime, NO Flatst |
n-type Si:P | [110] ±0.5° | 3″ | 381 | P/E | 11-15 | SEMI Prime, Individual cst, TTV<15μm |
n-type Si:P | [110] ±0.5° | 3″ | 381 | P/E | 1-10 | SEMI Prime, SEMI Flat (one) @ [1,-1,0], in Empak cassettes of 7 wafers |
n-type Si:As | [110] ±0.5° | 3″ | 420 | P/P | 0.001-0.007 | SEMI Prime, Primary Flat @ [1,-1,0] |
n-type Si:P | [100] ±1° | 3″ | 2,286 ±13 | P/P | 15-28 | SEMI Prime, TTV<1μm, Sealed in individual csts, in groups of 5 wafers |
n-type Si:P | [100] | 3″ | 300 | P/P | 10-30 | SEMI Prime, in Empak cassettes of 6 & 7 wafers |
n-type Si:P | [100] | 3″ | 300 | P/P | 10-30 | SEMI Prime, TTV<6μm |
n-type Si:P | [100] | 3″ | 300 | P/P | 10-30 | SEMI Prime, TTV<6μm (cassettes of 11, 18, 22 and 24 wafers) |
n-type Si:P | [100] ±1° | 3″ | 300 ±10 | P/P | 5-15 | SEMI Prime, TTV<1μm, Empak cst |
n-type Si:P | [100] | 3″ | 381 | P/E | 5-10 | SEMI Prime, TTV<5μm |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.