InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure [...]
2022-07-22meta-author
PAM XIAMEN offers Silicon Wafer Thickness:1000μm.
Silicon Wafer ,6in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm, Thickness 1000μm, SSP,
PRIME -Si Wafers, Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
PAM XIAMEN offers Moissanite Raw Crystal Silicon Carbide.
High quality colorless raw Moissanite crystals (D-E-F color) from PAM XIAMEN are grown using advanced technologies. Gem grade Moissanite silicon carbide crystals are available in different sizes ranging from tens of grams to kilograms.
What is Moissanite?
In 1893, [...]
2019-03-14meta-author
In Q4 Discount prices for Universities and Research Institutes
We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s [...]
2012-10-18meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
1″
475 ±10
E/E
FZ >500 {1,900-2,400}
n-type Si:P
[111] ±0.5°
1″
280
P/P
FZ 2,000-10,000
TTV<5μm
Intrinsic Si:-
[100]
1″
320
P/E
FZ >20,000
Prime
Intrinsic Si:-
[100]
1″
500
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
1″
160
P/P
FZ >10,000
Prime, TTV<8μm
Intrinsic Si:-
[100]
0.5″
12700
C/C
FZ >10,000
a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:-
[111] ±0.5°
1″
500
P/P
FZ >15,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
1″
1000
P/E
FZ 14,000-30,000
Cassettes of 7, 6, 6 wafers
Intrinsic Si:-
[111] ±2°
1″
27870
C/C
FZ >10,000
Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type [...]
2019-03-08meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author