PAM XIAMEN offers Silicon Wafers.
Our clients often use the following silicon wafers for the above applications:
Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, [...]
2019-02-26meta-author
PAM XIAMEN offers FTO Coated on Conventional Glass.
FTO Glass Substrate (TEC 7) 1″ x 1″ x 1.1 mm, R: 7-10 ohm/sq 25pcs
FTO Glass Substrate (TEC 7) 100 x 100 x 1.1 mm, R: 7-10 ohm/sq 5 pcs
FTO Glass Substrate (TEC 7) [...]
2019-04-28meta-author
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate.
Main Parameters
Crystal structure
M3
Unit cell constant
a=5.147 Å
Melt point(℃)
2700
Density(g/cm3)
6
Hardness
8-8.5(mohs)
Purity
99.99%
Thermal expansion(/℃)
10.3×10-6
Dielectric constants
ε=27
Growth method
arcs
Size
10×3,10×5,10×10,15×15,,20×15,20×20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon [...]
2019-03-15meta-author
Differential magnetoresistive sensor for sale from PAM-XIAMEN is one of magnetoresistive sensors, which is packaged by indium antimonide (InSb) thin film magnetoresistor plus bias magnet with a metal shell. As a result, the output signal is a quasi-sine wave signal. The specification of differential magnetoresistive (MR) [...]
2021-08-03meta-author
The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
2020-01-13meta-author
PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer.
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)
Silicon Wafer Specifications:
Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp
ZnO=150nm, ZnO film: c-axis, medium (001) orientation
Pt/Ti film: [...]
2019-04-29meta-author