GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
2012-05-21meta-author
GaN
PAM XIAMEN offers Cu Coated Silicon.
Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm
Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm
Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]
2019-04-26meta-author
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals.
PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
2019-03-15meta-author
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
2022-09-06meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100-4.0°] ±0.5°
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
200
P/P
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
350
P/P
FZ >10,000
SEMI Test, Wafers with edge chips
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime, in hard cassettes of 2 & 5 wafers
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] [...]
2019-03-07meta-author
PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily)
Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite.
It is often alloyed with tin to make lead tin telluride, [...]
2019-05-14meta-author