Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV light while has a wide transmission range in infrared band. Infrared grade germanium single crystal is the basic material for making infrared lenses, infrared window [...]
2021-09-18meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author
In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]
2021-04-29meta-author
The illustration in (a) shows evanescent waves coupling at two interfaces on the flat planes of a ridge. Figure (b) shows the simulated electromagnetic field intensity of the structure. Image credit: AIST.
(PhysOrg.com) — By fabricating ridges coated with silicon dioxide (SiO2) on the surface [...]
2017-10-24meta-author
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author