PAM XIAMEN offers Single-emitter LD Chip 808nm @8W.
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 350um
Output Power: 8W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
PAM XIAMEN offers La3Ga5SiO14 crystals.
Langasite- La3Ga5SiO14 crystals is a new piezoelecrictric materials with the value of electromechanical coupling coefficient, which is, intermediate between this coefficient of a quartz crystal and that of lithium tantalate.
Characteristics\Crystals
Quartz, SiO2
Langasite, La3Ga5SiO14
Lithium tetraborate, Li2B2O3
Lithium tantalate, LiTaO3
Electromechanical Coupling Factor [...]
2019-05-07meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
SiC wafer can be used to manufacture BJT (bipolar junction transistor) devices with low conduction resistance and high blocking voltage up to tens of kilovolts. For applications with a blocking voltage of 4.5kV and higher, bipolar SiC power devices will have more practical application value than unipolar SiC power [...]
2023-11-28meta-author
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]
2018-08-14meta-author
PAM XIAMEN offers GaAs(100) Cr-doped crystal.
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp
GaAs single crystal wafer
Growing Method: VGF
Orientation: [...]
2019-04-22meta-author