Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18meta-author
PAM XIAMEN offers 3″CZ Prime Silicon Wafer
Item3, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
[...]
2020-03-25meta-author
With the sudden outbreak of COVID-19, some vertical categories that are not usually paid attention to quickly became popular. Materials related to epidemic prevention and control, such as masks, goggles, and disinfectant, have become popular. Among them, UVC (Ultra Violet C radiation) LED with [...]
2022-05-30meta-author
GaN Substrates Offer High Performance At A Price
GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to [...]
2013-03-21meta-author
InGaN (Indium Gallium Nitride) epi-wafer with MQWs is provided, which is a light-emitting layer for fabricating blue or green LED. Indium gallium nitride is a mix material of gallium nitride and indium nitride and often grown on GaN buffer on sapphire, silicon or SiC substrate. Researches carried [...]
2020-07-14meta-author
Highlights
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The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
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The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
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The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
Abstract
The metal-oxide-semiconductor [...]
2017-10-12meta-author