PAM XIAMEN offers 6″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
p-type Si:B | [100] | 6″ | 675 | P/E | 1-100 | SEMI Prime, 1Flat (57.5mm) |
p-type Si:B | [100] | 6″ | 800 | E/E | 1-50 | SEMI, 1Flat (57.5mm), TTV<5μm |
p-type Si:B | [100] | 6″ | 320 | P/E | 0.001-0.030 | JEIDA Prime |
p-type Si:B | [100] | 6″ | 675 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm) |
p-type Si:B | [100] | 6″ | 675 | P/E | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm) |
p-type Si:B | [111-4.0°] ±0.5° | 6″ | 625 | P/E | 4-15 {7.1-8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm) |
p-type Si:B | [111] ±0.5° | 6″ | 675 | E/E | 0.010-0.025 | SEMI, 1Flat (57.5mm) |
n-type Si:P | [100] | 6″ | 925 ±15 | E/E | 5-35 {12.5-29.7} | JEIDA Prime, TTV<5μm |
n-type Si:P | [100] | 6″ | 675 | P/E | 2.7-4.0 | SEMI Prime |
n-type Si:P | [100] | 6″ | 250 ±5 | P/P | 1-3 | SEMI Prime, 1Flat (57.5mm), TTV<2μm |
n-type Si:P | [100] | 6″ | 725 | P/P | 1-100 | SEMI Notch, Prime, TTV<1μm, LM |
n-type Si:P | [100] ±1° | 6″ | 800 | P/E | 1-10 | SEMI Prime, 1Flat(57.5mm) |
n-type Si:P | [100-25° towards[110]] ±1° | 6″ | 800 | C/C | 1-100 | SEMI notch Prime |
n-type Si:P | [100] | 6″ | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, in stacked trays of 2 wafers |
n-type Si:P | [100] | 6″ | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer |
n-type Si:Sb | [100-6° towards[110]] ±0.5° | 6″ | 675 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm) |
n-type Si:Sb | [100] | 6″ | 675 | P/E | 0.008-0.020 | SEMI Prime, 1Flat (57.5mm) |
n-type Si:As | [100] | 6″ | 1000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
n-type Si:As | [100] | 6″ | 1000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
n-type Si:As | [100] | 6″ | 675 | P/EOx | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm |
n-type Si:P | [100] | 6″ | 675 | P/EOx | 0.001-0.002 | SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick |
n-type Si:P | [111] ±0.5° | 6″ | 675 | P/E | 1-100 | Prime, NO Flats |
n-type Si:P | [111] ±0.5° | 6″ | 675 | P/E | 1-100 | SEMI Prime, NO Flats |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.
PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.