PAM XIAMEN offers 6″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
n-type Si:As | [100] | 6″ | 675 | OxP/EOx | 0.001-0.005 | SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick |
p-type Si:B | [100] | 6″ | 735 | P/P | FZ >50 | Prime, TTV<2μm |
p-type Si:B | [100] | 6″ | 650 | P/P | FZ 8-13 | SEMI Prime (57.5mm) |
n-type Si:P | [100] | 6″ | 475 | P/P | FZ 60-75 | SEMI Prime, MCC Lifetime>14,980μs, Lasermark |
n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 800 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs |
n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 950 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs |
Intrinsic Si:- | [100] | 6″ | 675 | P/P | FZ >10,000 | SEMI Prime (57.5mm) |
Intrinsic Si:- | [100] | 6″ | 675 | P/P | FZ >10,000 | SEMI notch Prime |
Intrinsic Si:- | [111] ±0.5° | 6″ | 675 | C/C | FZ >10,000 | SEMI notch |
p-type Si:B | [100] | 6″ | 1000 | P/P | 10-15 | SEMI Prime (57.5mm) |
p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6″ | 475 | P/P | 1-100 | SEMI Prime (57.5mm) |
p-type Si:B | [100] | 6″ | 275 | P/P | 0.01-0.02 | SEMI Prime (57.5mm), TTV<5μm |
p-type Si:B | [100] | 6″ | 275 | P/P | 0.01-0.05 | SEMI Prime (57.5mm), TTV<2μm |
p-type Si:B | [100-6° towards[111]] ±0.5° | 6″ | 675 | P/P | 0.01-0.02 | SEMI Prime (57.5mm) |
n-type Si:P | [100] | 6″ | 725 | P/P | 5-35 | SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished |
n-type Si:P | [100] | 6″ | 725 | P/P | 5-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, with Laser Mark |
n-type Si:P | [100] | 6″ | 725 | P/P | 5-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, with Laser Mark |
n-type Si:P | [100] | 6″ | 675 ±15 | P/E | 3-10 | SEMI Prime (57.5mm) |
n-type Si:P | [100] | 6″ | 675 | P/E | 2.7-4.0 | SEMI Prime |
n-type Si:P | [100-25° towards[110]] ±1° | 6″ | 650 | P/P | 1-100 | SEMI notch Prime, TTV<5μm |
n-type Si:P | [100-25° towards[110]] ±1° | 6″ | 700 | P/P | 1-100 | SEMI notch Prime, TTV<5μm |
n-type Si:P | [100] | 6″ | 1875 | P/P | 1-100 | SEMI Prime (57.5mm), TTV<3μm, in stacked trays of 5 wafers |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.