The demand of photodetectors fabricated on InGaAs/InP PIN wafer operating at around 1300nm~1550nm has increased significantly. So that is great news for semiconductor wafer foundries, like PAM-XIAMEN, who offer semiconductor substrate and epitaxial wafer for electronic and power devices fabrication. InGaAs wafer for PIN [...]
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-04meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author
PAM XIAMEN offers Zinc Oxide on Silicon.
The following wafers work
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2 layer on 4″ Silicon wafer
Dry Oxide layer thickness: 100 nm ( 2000A) +/-10%
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Note: customized oxide layer [...]
2019-02-26meta-author
You must know the barrel theory: how much water a bucket can hold depends on the shortest piece of wood. For those who do research, just one point is good; for applications, the overall performance must always be considered and find the most suitable one for the [...]
2021-04-22meta-author