Highlights
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The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
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The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
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The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
Abstract
The metal-oxide-semiconductor [...]
2017-10-12meta-author
AlGaN is a direct wide band gap semiconductor material. By changing the composition of AlGaN material, the band gap size can be continuously adjusted from 3.39 eV to 6.1 eV, covering the UV band range from 210 nm to 360 nm, so it is [...]
2022-10-14meta-author
PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm.
CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp
Due to [...]
2019-04-26meta-author
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
We also [...]
2018-08-07meta-author
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
2019-12-09meta-author
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices
We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
2013-04-24meta-author