InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
6″ Diameter Wafers [...]
2019-05-15meta-author
Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing [...]
2018-11-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
480
C/C
1-30
SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~1.0ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~0.2ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI [...]
2019-03-05meta-author
We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS [...]
2020-02-18meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 mm Length
Ta [...]
2019-05-10meta-author