PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
Al2O3 (Sapphire)
PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter:
1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM
Al2O3- Sapphire Wafer, [...]
2019-04-16meta-author
In contrast to indirect semiconductor detectors, CZT provides ‘direct’ solid-state technology. The CZT semiconductor is a pixilated array with an effective Z of 50 and a density of 5.8 g/cm3. Gamma rays enter the CZT semiconductor detector and are directly converted to electron hole [...]
2019-03-11meta-author
PAM XIAMEN offers Gallium Arsenide substrate with various sizes and low density. The GaAs wafer with the conductivity of N type, P type, or semi-insulating is for sale. In addition, you can offer your own wafer design to customize.
1. Main Parameters of Gallium Arsenide Substrate
MAIN [...]
2019-03-11meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:
Description
Growth Method
—
MCZ
Single crystal size
inch
2 – 8
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks:The above parameters can be customized.
FAQ about MCZ Silicon Wafers
Q:This is just a curiosity, but let me ask about the production method of [...]
2019-02-27meta-author
PAM XIAMEN offers Thinned Silicon Wafers! We have them! In Stock and ready to ship!
Free Standing Thin Silicon Wafers
We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror [...]
2019-02-14meta-author