PAM XIAMEN offers LD Bare Bar for 940nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14meta-author
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 39-47Ωcm
TTV ≤10μm
RRG ≤ 7%
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm
1.1 Wafers are to be [...]
2019-08-22meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author
Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics
LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets [...]
2013-11-22meta-author