What we provide:
| Item | undoped N- | Si doped N+ | Semi-insulating | P+ |
| Корпусная GaN-подложка | yes | yes | yes | |
| GaN on sapphire | yes | yes | yes | yes |
| InGaN on sapphire | yes | *** | ||
| AlN on sapphire | yes | |||
| LED wafer | (p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire) | |||
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on Sapphire:
For specification of AlN on sapphire template, pleas view AlN substrate:
http://www.qualitymaterial.net/AlN-Substrate.html
AlGaN/GaN on Sapphire：
For AlGaN/GaN on sapphire template, please view AlGaN/GaN:
https://www.powerwaywafer.com/GaN-HEMT-epitaxial-wafer.html
Lattice constant of GaN substrate
Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction
GaN,Wurtzite sructure. The lattice constants a vs. temperature.
GaN,Wurtzite sructure. The lattice constants c vs. temperature
Properties of GaN-подложка
| PROPERTY / MATERIAL | Cubic (Beta) GaN | Hexagonal (Alpha) GaN |
| . | . | . |
| Structure | Zinc Blende | Wurzite |
| Space Group | F bar4 3m | C46v ( = P63mc) |
| Stability | Meta-stable | Stable |
| Lattice Parameter(s) at 300K | 0.450 nm | a0 = 0.3189 nm |
| c0 = 0.5185 nm | ||
| Density at 300K | 6.10 g.cm-3 | 6.095 g.cm-3 |
| Elastic Moduli at 300 K | . . . | . . . |
| Linear Thermal Expansion Coeff. | . . . | Along a0: 5.59×10-6 K-1 |
| at 300 K | Along c0: 7.75×10-6 K-1 | |
| Calculated Spontaneous Polarisations | Not Applicable | – 0.029 C m-2 |
| Bernardini et al 1997 | ||
| Bernardini & Fiorentini 1999 | ||
| Calculated Piezo-electric Coefficients | Not Applicable | e33 = + 0.73 C m-2 |
| e31 = – 0.49 C m-2 | ||
| Bernardini et al 1997 | ||
| Bernardini & Fiorentini 1999 | ||
| A1(TO): 66.1 meV | ||
| E1(TO): 69.6 meV | ||
| Phonon Energies | TO: 68.9 meV | E2: 70.7 meV |
| LO: 91.8 meV | A1(LO): 91.2 meV | |
| E1(LO): 92.1 meV | ||
| Debye Temperature | 600K (estimated) | |
| Slack, 1973 | ||
| . . . | Units: Wcm-1K-1 | |
| 1.3, | ||
| Tansley et al 1997b | ||
| 2.2±0.2 | ||
| for thick, free-standing GaN | ||
| Vaudo et al, 2000 | ||
| 2.1 (0.5) | ||
| for LEO material | ||
| where few (many) dislocations | ||
| Thermal Conductivity | Florescu et al, 2000, 2001 | |
| near 300K | ||
| circa 1.7 to 1.0 | ||
| for n=1×1017 to 4×1018см-3 | ||
| in HVPE material | ||
| Florescu, Molnar et al, 2000 | ||
| 2.3 ± 0.1 | ||
| in Fe-doped HVPE material | ||
| of ca. 2 x108 ohm-cm, | ||
| & dislocation density ca. 105 cm-2 | ||
| (effects of T & dislocation density also given). | ||
| Mion et al, 2006a, 2006b | ||
| Melting Point | . . . | . . . |
| Dielectric Constant | . . . | Along a0: 10.4 |
| at Low/Lowish Frequency | Along c0: 9.5 | |
| Refractive Index | 2.9 at 3eV | 2.67 at 3.38eV |
| Tansley et al 1997b | Tansley et al 1997b | |
| Nature of Energy Gap Eg | Direct | Direct |
| Energy Gap Eg at 1237K | 2.73 eV | |
| Ching-Hua Su et al, 2002 | ||
| Energy Gap Eg at 293-1237 K | 3.556 – 9.9×10-4T2 / (T+600) eV | |
| Ching-Hua Su et al, 2002 | ||
| Energy Gap Eg at 300 K | 3.23 eV | 3.44 eV |
| Ramirez-Flores et al 1994 | Monemar 1974 | |
| . | . | |
| 3.25 eV | 3.45 eV | |
| Logothetidis et al 1994 | Koide et al 1987 | |
| . | ||
| 3.457 eV | ||
| Ching-Hua Su et al, 2002 | ||
| Energy Gap Eg at ca. 0 K | 3.30 eV | 3.50 eV |
| Ramirez-Flores et al1994 | Dingle et al 1971 | |
| Ploog et al 1995 | Monemar 1974 | |
| Intrinsic Carrier Conc. at 300 K | . . . | . . . |
| Ionisation Energy of . . . Donor | . . . . | . . . . |
| Electron effective mass me* / m0 | . . . | 0.22 |
| Moore et al, 2002 | ||
| Electron Mobility at 300 K | . . . | . |
| for n = 1×1017 cm-3: | ca. 500 cm2V-1s-1 | |
| for n = 1×1018 cm-3: | ca. 240 cm2V-1s-1 | |
| for n = 1×1019 cm-3: | ca. 150 cm2V-1s-1 | |
| Rode & Gaskill, 1995 | ||
| Tansley et al 1997a | ||
| Electron Mobility at 77 K | . . . . | . . . . |
| for n = . . | ||
| Ionisation Energy of Acceptors | . . . | Mg: 160 meV |
| Amano et al 1990 | ||
| Mg: 171 meV | ||
| Zolper et al 1995 | ||
| Ca: 169 meV | ||
| Zolper et al 1996 | ||
| Hole Hall Mobility at 300 K | . . . | . . . . |
| for p= . . . | ||
| Hole Hall Mobility at 77 K | . . . . | . . . |
| for p= . . . | ||
| . | Cubic (Beta) GaN | Hexagonal (Alpha) GaN |
Application of GaN substrate
Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.