PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 525 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter), [...]
2019-06-28meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(11-22)- N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]
Calcite for sale is a negative uniaxial crystal that has high birefringence, wide spectral transmission and availability in reasonably sized rhombs. It’s good material used as visible and near IR polarizers and retardation plate. CaCO3 is the chemical formula for the mineral. PAM XIAMEN [...]
2019-04-17meta-author
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
2inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 50.8mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns (the value is unchanged)
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author