GaAs is a typical III-V direct bandgap semiconductor material with excellent optoelectronic properties and high mobility, making it suitable for the production of high-speed RF devices. GaAs can also form quantum well structures with GaAlAs, further improving the performance of light-emitting devices (low threshold current, narrow linewidth). The GaAs/GaAIAs [...]
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of MOSFETs. Therefore, systematic research on [...]
Semiconductor GaAs materials are mainly used in optical communication active devices, semiconductor light emitting diodes (LEDs), high-efficiency solar cells, and Hall devices. Moreover, GaAs optoelectronic devices have important applications in household appliances, industrial instruments, large screen displays, office automation equipment, traffic management, etc. To grow GaAs single crystals, GaAs [...]
III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the carrier confinement and improves the [...]
InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be used as ohmic contacts of [...]
Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and other fields. PAM-XIAMEN can offer [...]
At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as GaAs substrate, has become a [...]
Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. PAM-XIAMEN, one of leading epitaxy [...]
PAM-XIAMEN provides GaAs epiwafer for MESFET devices, which is one FET epitaxial structure with modulated doping. Detailed epitaxial growth heterostructure is listed below for your reference. The electron migration rate of GaAs is 5.7 times higher than that of silicon, which is very suitable for high-frequency circuits. The electrical [...]
At present, P-P+ (boron doped) silicon epitaxial wafers are widely used in the manufacture of large-scale integrated circuits and discrete devices. The requirements for the thickness of P-P+ silicon epitaxial wafers vary with the device type. For making high-speed digital circuits, only about 0.5μm of epilayer is needed. For [...]