Список вафельные

Нитрид Semiconductor вафельные

Free-standing Gallium Nitride    Item No. Type Orientation Thickness   Grade Micro Defect Density Surface Usable area              N-Type     PAM-FS-GaN50-N 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%     SEMI-INSULATING     PAM-FS-GaN50-SI 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN45-SI dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN40-SI dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN38-SI dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN25-SI dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or [...]

Галлье Semiconductor вафельного

PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP GaSb Wafer Substrate – Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type   Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A 1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A < 1000 1-100 GaSb (100) 50.8 450±25 SSP N/A N/A (1-1.2)E17 N/A N/A 1-100 GaSb (100) 50.8 350±25 SSP N/A N/A N/A N/A N/A 1-100 GaSb (100) 76.8 500-600 N/A N/A Undoped none N/A N/A 1-100 GaSb (100) 100 800±25 DSP N/A P/Zn N/A N/A N/A 1-100 GaSb (100) 100 250±25 N/A N/A  P/ZnO N/A N/A N/A As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team 1)2″,3″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:P/undoped;P/Si;P/Zn Nc(cm-3):(1~2)E17 Mobility(cm2/V ·s):600~700 Growth Method:CZ Polish:SSP 2)2″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:N/undoped;P/Te Nc(cm-3):(1~5)E17 Mobility(cm2/V ·s):2500~3500 Growth Method:LEC Polish:SSP Note: *** As [...]

Ge вафельный Поставщик

Ge Wafer Substrate-Germanium No. Material Orientation. Diameter Thickness Polish Resistivity Type   Dopant Prime flat EPD Ra (mm) (μm) Ω·cm   Orientation /cm2   1-100 Ge (100) 50.8 500±25 SSP 0.0138-0.02 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500 SSP ≥30 N/undoped N/A N/A <5A 1-100 Ge (100) 50.8 500 SSP 58.4-63.4 N/undoped N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-1 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 1000 DSP >30 N/A (110) N/A N/A 1-100 Ge (100) 50.8 2000 SSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 4000 SSP N/A N/A N/A N/A N/A 1-100 Ge (111)/(110) 50.8 200000 N/A 5-20 N/A N/A N/A N/A 1-100 Ge (100) 50.8 400 SSP <0.4 N/A N/A N/A N/A 1-100 Ge (100)/(111) 50.8 4000±10 DSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 350 SSP 1-10 P/Ga (110) ≤5000 N/A PAMP20295 Ge (100) 50.8 500±25 SSP 2-10 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 N/Sb (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 P/Ga (110) ≤5000 N/A 1-100 Ge (111) 60 1000 As cut >30 N/A (110) <3000 N/A 1-100 Ge (100) 100 N/A SSP <0.019 P/Ga (110) <500 N/A 1-100 Ge (100) 100 1000±25 SSP ≥30 N/undoped N/A N/A N/A 1-100 Ge (100) off 6°or off 9° 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100) 100 500 DSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100)6°off (111) 100 185±15 DSP 0.01-0.05 N/A (110) ≤5000 <5A 1-100 Ge (100)6°off (110) 100 525±25 SSP 0.01-0.04 N/A N/A N/A N/A 1-100 Ge (100) 100 N/A N/A N/A N/A N/A N/A N/A 1-100 Ge (100) 100 1000±15 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 750±25 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 500±25 SSP 10-30 N/A N/A N/A N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <4000 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (111) 100 500±25 SSP <0.4 N/Sb N/A N/A N/A 1-100 Ge (100)6°off-cut toward(111)A 100 175±25 SSP 0.003-0.009 P/Ga (0-1-1) (0-11) <100 N/A PAM210802 Ge (100) 100 175 DSP <0.02 P N/A N/A N/A 1-100 Ge (310)±0.1° 100 200±15 DSP >20 N/A N/A N/A N/A 1-100 Ge (111) 150 600-700 N/A >30 N/A (110) N/A N/A   Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial orientation. Take the Ge(310) for [...]

Индий Semiconductor вафельные

PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb InAs wafer Substrate- Indium Arsenide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type  Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 InAs (110) 40.0 500 SSP N/A P (1-9)E17 N/A N/A 1-100 InAs (100) 50.8 450 SSP N/A P 1E17/cc N/A < 20000 1-100 InAs (100) 50.8 400 SSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs (100) 50.8 400 DSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs (111)B 50.8 N/A SSP N/A N/S (1-3)E18 N/A N/A 1-100 InAs (100) 50.8 N/A SSP N/A N/Te 1E16/cc N/A N/A 1-100 InAs (100) 50.8 400 DSP N/A P (1-9)E18/cc N/A N/A 1-100 InAs (100) 3x3x5 N/A N/A N/A N/A 3E16/cc N/A N/A As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team 3)2”InAs Type/Dopant:N Un-doped Orientation : <111>A ±0.5° Thickness:500um±25um epi-ready Ra<=0.5nm Carrier Concentration(cm-3):1E16~3E16 Mobility(cm -2 ):>20000 EPD(cm -2 ):<15000 SSP 5)2”InAs Type/Dopant:N/P Orientation :(100), Carrier Concentration(cm-3):(5-10)E17, Thickness:500 um SSP Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. InP Wafer Substrate- Indium Phosphide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type [...]

CZT Semiconductor вафельные

CZT Semiconductor Wafer CdZnTe Wafer Substrate-Cadmium Zinc Telluride Quantity Material Orientation. Size Thickness Polish Resistivity Type                Dopant FWHM PCS (mm) (μm) Ω·cm     1-100 CdZnTe N/A 10×10 1000 DSP >1E10 N @59.5keV<7% 1-100 CdZnTe N/A 10×10 2000 DSP >1E10 N @59.5keV<7% 1-100 CdZnTe (111) 10×10 500 SSP N/A P N/A 1-100 CdZnTe (211)B 10X10 800 DSP N/A N/A N/A 1-100 CdZnTe N/A 10X10 500 lapping N/A N/A N/A 1-100 CdZnTe N/A 10X10 500 DSP N/A N/A N/A 1-100 CdZnTe N/A 20X20 800 DSP N/A N/A N/A 1-100 CdZnTe N/A 20×20 5000 DSP N/A N/A N/A 1-100 CdZnTe N/A 20×20 2000 DSP N/A N/A N/A 1-100 CdZnTe N/A 20×20 3000 DSP N/A N/A N/A 1-100 CdZnTe N/A 3X3 2000 DSP N/A N/A N/A As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

Другие Вафли

Other Wafers ZnO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 ZnO (0001) 10×10 1000 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 1000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (10-10) 10×10 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10X15 300 SSP N/A undoped none N/A <0.5 1-100 ZnO N/A 14X14 1000 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 15X15 300 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 1000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 As cut N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 2000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5×5 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5X5 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5X5 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (11-20) 5X5 500 SSP N/A undoped none N/A <0.5 As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. MgO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 MgO (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10×10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 500 DSP N/A N/A N/A N/A <0.5 As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. YSZ Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 YSZ (100) 25.4 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 200 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 200 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 10×10 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (111) 10×10 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 20×20 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 30×30 500 SSP N/A N/A N/A N/A <0.5 As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. STO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 STO (100) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (111) 10X10 500 SSP N/A N/A N/A N/A <0.5 As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. LSAT Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 LSAT (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (100) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (111) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (100) 10X10 2000 SSP N/A N/A N/A N/A <0.5 As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. TiO2 Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 TiO2 (110) 5×5 500 SSP N/A N/A N/A N/A <0.5 1-100 TiO2 (011) 5×5 500 SSP N/A N/A N/A N/A <0.5 1-100 TiO2 (001) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 TiO2 (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 TiO2 (011) 10X10 500 SSP N/A N/A N/A N/A <0.5 As a TiO2 wafer supplier,we offer TiO2 wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. LAO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type [...]

Graphene Wafer

The wafer of graphene for sale from PAM-XIAMEN are Monolayer Graphene on PET film, Monolayer Graphene on SiO2/Silicon, Bilayer Graphene on SiO2/Silicon, Monolayer Graphene on Copper, and graphene wafer growth on nickel for researches and industry. Graphene is a new semiconductor material with a single-layer two-dimensional honeycomb lattice structure piled up by carbon atoms, which is connected by sp² [...]

Кремний вафельные

Silicon Wafer Si wafer Substrate -Silicon Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm   a/cm3 cm2/Vs /cm2 1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A 1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A 1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A 1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A 1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A 1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A 1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A 1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A 1-100 Si (100) 50.8 500±25 SSP 1~10 N  P N/A N/A N/A 1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A 1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A 1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A 1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si with Oxide layer 3000A (100) 100 675±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si (100) 100 N/A SSP N/A P/b N/A N/A N/A 1-100 Si (100) 100 500±25 SSP 1~25 N/A N/A N/A N/A 1-100 Si (100) 100 500 SSP 1~10 P/ N/A N/A N/A 1-100 Si (100) 100 500±25 P/E 1-10 N/ N/A N/A N/A 1-100 Si (100) 100 500/525±25 P/P 1-10 N/ N/A N/A N/A 1-100 Si (100) 100 500/525±25 N/A N/A N/A N/A N/A N/A 1-100 Si (100) 100 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A 1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A 1-100 Si (100)/(111) 150 550~650 DSP N/A N/A N/A N/A N/A 1-100 Si (100)/(111) 150 600-700 SSP <0.5 N/A N/A N/A N/A 1-100 Si (111) 150 400±25 DSP <50 N/ N/A N/A N/A 1-100 Si (100) 150 545 P/E 1-3 N/ N/A N/A N/A 1-100 Si (100) 200 725±25 SSP 1~25 P/ N/A N/A N/A As a [...]

Система химического осаждения графена из паровой фазы

Мы предоставляем серию графемных 2D-систем для выращивания графема, УНТ и других 2D-материалов. и предлагает наиболее эффективную систему химического осаждения из паровой фазы (CVD) для выращивания графена (совместима как для LPCVD, так и для APCVD-роста). Мы также можем адаптировать каждую из этих стандартных систем к [...]