GaSb вафельные

Описание продукта

PAM-XIAMEN offers Compound Semiconductor GaSb wafer – антимонид галлий grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

Here is the detail specification of wafer:

Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility（cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP

2) 2 "(50,8) GaSb пластины
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/undoped;P/Te
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP

3) 2 "(50,8) GaSb пластины
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

4) 2 "(50,8) GaSb пластины
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

5) 2 "(50,8) GaSb пластины
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

Относительные продукты:
InAs вафельные
InSb вафельные
InP пластины
GaAs вафельные
GaSb вафельные
GaP вафельные

Галлий антимонида (GaSb) может поставляться в виде пластин с вырезом в виде, протравленной или полированной отделкой и доступны в широком диапазоне концентрации носителей, диаметр и толщины.

GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.

We also offer gallium antimonide wafer epi service, take below as an example:

2”size GaSb epi wafer:
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs