GaSb вафельные
PAM-XIAMEN предлагает составные полупроводниковые пластины GaSb — антимонид галлия, выращенные LEC (Liquid Encapsulated Czochralski) как готовые к эпиляции или механические сорта с n-типом, p-типом или полуизолирующие в различной ориентации (111) или (100).
- Описание
Описание продукта
PAM-XIAMEN offers Compound Semiconductor GaSb wafer – антимонид галлий grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
Here is the detail specification of wafer:
2 "(50,8) Спецификация GaSb вафельные
3 "(50,8) Спецификация GaSb вафельные
4 "(100 мм) Спецификация GaSb вафельные
2″ GaSb Wafer Specification
tem | Specifications | ||
добавка | Undoped | Zinc | Tellurium |
Тип проводимости | Р-типа | Р-типа | N-типа |
Wafer Diameter | 2″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 500±25um | ||
Primary Flat Length | 16±2mm | ||
Secondary Flat Length | 8±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <10um | ||
BOW | <10um | ||
WARP | <12um | ||
Laser Marking | upon request | ||
Suface Finish | P/E, P/P | ||
Epi Ready | да | ||
Пакет | Single wafer container or cassette |
3″ GaSb Wafer Specification
tem | Specifications | ||
Тип проводимости | Р-типа | Р-типа | N-типа |
добавка | Undoped | Zinc | Tellurium |
Wafer Diameter | 3″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 600±25um | ||
Primary Flat Length | 22±2mm | ||
Secondary Flat Length | 11±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <12um | ||
BOW | <12um | ||
WARP | <15um | ||
Лазерная маркировка | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | да | ||
Пакет | Single wafer container or cassette |
4″ GaSb Wafer Specification
tem | Specifications | ||
добавка | Undoped | Zinc | Tellurium |
Тип проводимости | Р-типа | Р-типа | N-типа |
Wafer Diameter | 4″ | ||
Wafer Orientation | (100)±0.5° | ||
Wafer Thickness | 800±25um | ||
Primary Flat Length | 32.5±2.5mm | ||
Secondary Flat Length | 18±1mm | ||
Carrier Concentration | (1-2)x1017cm-3 | (5-100)x1017cm-3 | (1-20)x1017cm-3 |
Mobility | 600-700cm2/V.s | 200-500cm2/V.s | 2000-3500cm2/V.s |
EPD | <2×103cm-2 | ||
TTV | <15um | ||
BOW | <15um | ||
WARP | <20um | ||
Лазерная маркировка | upon request | ||
Suface finish | P/E, P/P | ||
Epi ready | да | ||
Пакет | Single wafer container or cassette |
1) 2 "(50,8), 3" (76,2 мм) GaSb пластины
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth Method:CZ
Польский:SSP
2) 2 "(50,8) GaSb пластины
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/undoped;P/Te
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500
Growth Method:LEC
Польский:SSP
3) 2 "(50,8) GaSb пластины
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Польский:SSP
4) 2 "(50,8) GaSb пластины
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Польский:SSP
5) 2 "(50,8) GaSb пластины
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Польский:SSP
Относительные продукты:
InAs вафельные
InSb вафельные
InP пластины
GaAs вафельные
GaSb вафельные
GaP вафельные
Галлий антимонида (GaSb) может поставляться в виде пластин с вырезом в виде, протравленной или полированной отделкой и доступны в широком диапазоне концентрации носителей, диаметр и толщины.
GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.
We also offer gallium antimonide wafer epi service, take below as an example:
2”size GaSb epi wafer:
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs
More epiwafer information, please read: