Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
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